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Analytical analysis of single-photon correlations emitted by disordered semiconductor heterostructures.

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Analytical analysis of single-photon correlations emitted by disordered semiconductor heterostructures. / Bozsoki, Peter; Hoyer, Walter; Kira, Mackillo et al.
In: Journal of Materials Science: Materials in Electronics, Vol. 20, No. Supple, 01.2009, p. 23-29.

Research output: Contribution to Journal/Magazine › Journal article › peer-review

Harvard

Bozsoki, P, Hoyer, W, Kira, M, Varga, I, Thomas, P, Koch, SW & Schomerus, H 2009, 'Analytical analysis of single-photon correlations emitted by disordered semiconductor heterostructures.', Journal of Materials Science: Materials in Electronics, vol. 20, no. Supple, pp. 23-29. https://doi.org/10.1007/s10854-007-9424-0

APA

Bozsoki, P., Hoyer, W., Kira, M., Varga, I., Thomas, P., Koch, S. W., & Schomerus, H. (2009). Analytical analysis of single-photon correlations emitted by disordered semiconductor heterostructures. Journal of Materials Science: Materials in Electronics, 20(Supple), 23-29. https://doi.org/10.1007/s10854-007-9424-0

Vancouver

Bozsoki P, Hoyer W, Kira M, Varga I, Thomas P, Koch SW et al. Analytical analysis of single-photon correlations emitted by disordered semiconductor heterostructures. Journal of Materials Science: Materials in Electronics. 2009 Jan;20(Supple):23-29. doi: 10.1007/s10854-007-9424-0

Author

Bozsoki, Peter ; Hoyer, Walter ; Kira, Mackillo et al. / Analytical analysis of single-photon correlations emitted by disordered semiconductor heterostructures. In: Journal of Materials Science: Materials in Electronics. 2009 ; Vol. 20, No. Supple. pp. 23-29.

Bibtex

@article{c195f5064bf04edaad1d15a7cf447c34,
title = "Analytical analysis of single-photon correlations emitted by disordered semiconductor heterostructures.",
abstract = "In a recent publication [Phys. Rev. Lett. 97, 227402 (2006), cond-mat/0611411], it has been demonstrated numerically that a long-range disorder potential in semiconductor quantum wells can be reconstructed reliably via single-photon interferometry of spontaneously emitted light. In the present paper, a simplified analytical model of independent two-level systems is presented in order to study the reconstruction procedure in more detail. With the help of this model, the measured photon correlations can be calculated analytically and the influence of parameters such as the disorder length scale, the wavelength of the used light, or the spotsize can be investigated systematically. Furthermore, the relation between the proposed angle-resolved single-photon correlations and the disorder potential can be understood and the measured signal is expected to be closely related to the characteristic strength and length scale of the disorder.",
author = "Peter Bozsoki and Walter Hoyer and Mackillo Kira and Imre Varga and Peter Thomas and Koch, {Stephan W.} and Henning Schomerus",
note = "The original publication is available at www.springerlink.com",
year = "2009",
month = jan,
doi = "10.1007/s10854-007-9424-0",
language = "English",
volume = "20",
pages = "23--29",
journal = "Journal of Materials Science: Materials in Electronics",
issn = "0957-4522",
publisher = "Springer New York",
number = "Supple",

}

RIS

TY - JOUR

T1 - Analytical analysis of single-photon correlations emitted by disordered semiconductor heterostructures.

AU - Bozsoki, Peter

AU - Hoyer, Walter

AU - Kira, Mackillo

AU - Varga, Imre

AU - Thomas, Peter

AU - Koch, Stephan W.

AU - Schomerus, Henning

N1 - The original publication is available at www.springerlink.com

PY - 2009/1

Y1 - 2009/1

N2 - In a recent publication [Phys. Rev. Lett. 97, 227402 (2006), cond-mat/0611411], it has been demonstrated numerically that a long-range disorder potential in semiconductor quantum wells can be reconstructed reliably via single-photon interferometry of spontaneously emitted light. In the present paper, a simplified analytical model of independent two-level systems is presented in order to study the reconstruction procedure in more detail. With the help of this model, the measured photon correlations can be calculated analytically and the influence of parameters such as the disorder length scale, the wavelength of the used light, or the spotsize can be investigated systematically. Furthermore, the relation between the proposed angle-resolved single-photon correlations and the disorder potential can be understood and the measured signal is expected to be closely related to the characteristic strength and length scale of the disorder.

AB - In a recent publication [Phys. Rev. Lett. 97, 227402 (2006), cond-mat/0611411], it has been demonstrated numerically that a long-range disorder potential in semiconductor quantum wells can be reconstructed reliably via single-photon interferometry of spontaneously emitted light. In the present paper, a simplified analytical model of independent two-level systems is presented in order to study the reconstruction procedure in more detail. With the help of this model, the measured photon correlations can be calculated analytically and the influence of parameters such as the disorder length scale, the wavelength of the used light, or the spotsize can be investigated systematically. Furthermore, the relation between the proposed angle-resolved single-photon correlations and the disorder potential can be understood and the measured signal is expected to be closely related to the characteristic strength and length scale of the disorder.

U2 - 10.1007/s10854-007-9424-0

DO - 10.1007/s10854-007-9424-0

M3 - Journal article

VL - 20

SP - 23

EP - 29

JO - Journal of Materials Science: Materials in Electronics

JF - Journal of Materials Science: Materials in Electronics

SN - 0957-4522

IS - Supple

ER -