Final published version
Research output: Contribution to Journal/Magazine › Journal article › peer-review
Research output: Contribution to Journal/Magazine › Journal article › peer-review
}
TY - JOUR
T1 - Applicability of Sc2O3 versus Al2O3 in MIM rectifiers for IR rectenna
AU - Almalki, S.
AU - Tekin, Serdar B.
AU - Sedghi, N.
AU - Hall, S.
AU - Mitrovic, I.Z.
PY - 2021/10/31
Y1 - 2021/10/31
N2 - Impedance matching between the terahertz antenna and ultra-fast Metal-Insulator-Metal (MIM) diode is a crucial issue in realizing rectenna technology for harvesting infrared (IR) energy spectrum. In this paper, scandium oxide (Sc 2O 3)-based MIM diodes were fabricated using magnetron sputtering and their rectification performance compared to state-of-the-art Au/Al 2O 3/Au diodes. The fabricated Al/Sc 2O 3/Al diode has exhibited around two orders of magnitude lower zero-bias dynamic resistance (R D0 = 956 kΩ) and high zero-bias responsivity (β 0 = 1 A/W) in advance to Au/Al 2O 3/Au diode. The results point to applicability of scandium oxide in MIM rectifiers for IR rectenna.
AB - Impedance matching between the terahertz antenna and ultra-fast Metal-Insulator-Metal (MIM) diode is a crucial issue in realizing rectenna technology for harvesting infrared (IR) energy spectrum. In this paper, scandium oxide (Sc 2O 3)-based MIM diodes were fabricated using magnetron sputtering and their rectification performance compared to state-of-the-art Au/Al 2O 3/Au diodes. The fabricated Al/Sc 2O 3/Al diode has exhibited around two orders of magnitude lower zero-bias dynamic resistance (R D0 = 956 kΩ) and high zero-bias responsivity (β 0 = 1 A/W) in advance to Au/Al 2O 3/Au diode. The results point to applicability of scandium oxide in MIM rectifiers for IR rectenna.
U2 - 10.1016/j.sse.2021.108082
DO - 10.1016/j.sse.2021.108082
M3 - Journal article
VL - 184
JO - Solid-State Electronics
JF - Solid-State Electronics
SN - 0038-1101
M1 - 108082
ER -