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Au/Ni/Au as a contact for p-type GaAs

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Au/Ni/Au as a contact for p-type GaAs. / Jones, S O; Bancroft, E; Jarvis, S P et al.
In: Semiconductor Science and Technology, Vol. 39, No. 12, 125011, 15.11.2024.

Research output: Contribution to Journal/Magazine › Journal article › peer-review

Harvard

Jones, SO, Bancroft, E, Jarvis, SP & Hayne, M 2024, 'Au/Ni/Au as a contact for p-type GaAs', Semiconductor Science and Technology, vol. 39, no. 12, 125011. https://doi.org/10.1088/1361-6641/ad8df7

APA

Jones, S. O., Bancroft, E., Jarvis, S. P., & Hayne, M. (2024). Au/Ni/Au as a contact for p-type GaAs. Semiconductor Science and Technology, 39(12), Article 125011. https://doi.org/10.1088/1361-6641/ad8df7

Vancouver

Jones SO, Bancroft E, Jarvis SP, Hayne M. Au/Ni/Au as a contact for p-type GaAs. Semiconductor Science and Technology. 2024 Nov 15;39(12):125011. doi: 10.1088/1361-6641/ad8df7

Author

Jones, S O ; Bancroft, E ; Jarvis, S P et al. / Au/Ni/Au as a contact for p-type GaAs. In: Semiconductor Science and Technology. 2024 ; Vol. 39, No. 12.

Bibtex

@article{a4dcad0cd9d54a299ea102e55ea1fe99,
title = "Au/Ni/Au as a contact for p-type GaAs",
abstract = "An easy to fabricate ohmic-contact to moderately-doped p-type GaAs has been achieved. The tri-layer Au/Ni/Au contact is deposited by thermal evaporation, followed by rapid thermal annealing in nitrogen atmosphere. A series of annealing times and temperatures are explored to determine the influence of annealing conditions on the low-resistance ohmic contacts. The resulting contacts show more than three orders of magnitude reduction in contact resistance compared to alternative Ti/Au depositions.",
author = "Jones, {S O} and E Bancroft and Jarvis, {S P} and M Hayne",
year = "2024",
month = nov,
day = "15",
doi = "10.1088/1361-6641/ad8df7",
language = "English",
volume = "39",
journal = "Semiconductor Science and Technology",
issn = "0268-1242",
publisher = "Institute of Physics Publishing",
number = "12",

}

RIS

TY - JOUR

T1 - Au/Ni/Au as a contact for p-type GaAs

AU - Jones, S O

AU - Bancroft, E

AU - Jarvis, S P

AU - Hayne, M

PY - 2024/11/15

Y1 - 2024/11/15

N2 - An easy to fabricate ohmic-contact to moderately-doped p-type GaAs has been achieved. The tri-layer Au/Ni/Au contact is deposited by thermal evaporation, followed by rapid thermal annealing in nitrogen atmosphere. A series of annealing times and temperatures are explored to determine the influence of annealing conditions on the low-resistance ohmic contacts. The resulting contacts show more than three orders of magnitude reduction in contact resistance compared to alternative Ti/Au depositions.

AB - An easy to fabricate ohmic-contact to moderately-doped p-type GaAs has been achieved. The tri-layer Au/Ni/Au contact is deposited by thermal evaporation, followed by rapid thermal annealing in nitrogen atmosphere. A series of annealing times and temperatures are explored to determine the influence of annealing conditions on the low-resistance ohmic contacts. The resulting contacts show more than three orders of magnitude reduction in contact resistance compared to alternative Ti/Au depositions.

U2 - 10.1088/1361-6641/ad8df7

DO - 10.1088/1361-6641/ad8df7

M3 - Journal article

VL - 39

JO - Semiconductor Science and Technology

JF - Semiconductor Science and Technology

SN - 0268-1242

IS - 12

M1 - 125011

ER -