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    Rights statement: © 2017 American Physical Society

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Binding energies of trions and biexcitons in two-dimensional semiconductors from diffusion quantum Monte Carlo calculations

Research output: Contribution to Journal/Magazine › Journal article › peer-review

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Binding energies of trions and biexcitons in two-dimensional semiconductors from diffusion quantum Monte Carlo calculations. / Szyniszewski, Marcin; Mostaani, Elaheh; Drummond, Neil David et al.
In: Physical review B, Vol. 95, 081301, 15.02.2017.

Research output: Contribution to Journal/Magazine › Journal article › peer-review

Harvard

Szyniszewski, M, Mostaani, E, Drummond, ND & Falko, V 2017, 'Binding energies of trions and biexcitons in two-dimensional semiconductors from diffusion quantum Monte Carlo calculations', Physical review B, vol. 95, 081301. https://doi.org/10.1103/PhysRevB.95.081301

APA

Szyniszewski, M., Mostaani, E., Drummond, N. D., & Falko, V. (2017). Binding energies of trions and biexcitons in two-dimensional semiconductors from diffusion quantum Monte Carlo calculations. Physical review B, 95, Article 081301. https://doi.org/10.1103/PhysRevB.95.081301

Vancouver

Szyniszewski M, Mostaani E, Drummond ND, Falko V. Binding energies of trions and biexcitons in two-dimensional semiconductors from diffusion quantum Monte Carlo calculations. Physical review B. 2017 Feb 15;95:081301. Epub 2017 Feb 7. doi: 10.1103/PhysRevB.95.081301

Author

Szyniszewski, Marcin ; Mostaani, Elaheh ; Drummond, Neil David et al. / Binding energies of trions and biexcitons in two-dimensional semiconductors from diffusion quantum Monte Carlo calculations. In: Physical review B. 2017 ; Vol. 95.

Bibtex

@article{3a3a37a8cfb14e76a317965b9c63bd51,
title = "Binding energies of trions and biexcitons in two-dimensional semiconductors from diffusion quantum Monte Carlo calculations",
abstract = "Excitonic effects play a particularly important role in the optoelectronic behavior of two-dimensional (2D) semiconductors. To facilitate the interpretation of experimental photoabsorption and photoluminescence spectra we provide statistically exact diffusion quantum Monte Carlo binding-energy data for Mott-Wannier models of excitons, trions, and biexcitons in 2D semiconductors. We also provide contact pair densities to allow a description of contact (exchange) interactions between charge carriers using first-order perturbation theory. Our data indicate that the binding energy of a trion is generally larger than that of a biexciton in 2D semiconductors. We provide interpolation formulas giving the binding energy and contact density of 2D semiconductors as functions of the electron and hole effective masses and the in-plane polarizability.",
author = "Marcin Szyniszewski and Elaheh Mostaani and Drummond, {Neil David} and Vladimir Falko",
note = "{\textcopyright} 2017 American Physical Society",
year = "2017",
month = feb,
day = "15",
doi = "10.1103/PhysRevB.95.081301",
language = "English",
volume = "95",
journal = "Physical review B",
issn = "1098-0121",
publisher = "AMER PHYSICAL SOC",

}

RIS

TY - JOUR

T1 - Binding energies of trions and biexcitons in two-dimensional semiconductors from diffusion quantum Monte Carlo calculations

AU - Szyniszewski, Marcin

AU - Mostaani, Elaheh

AU - Drummond, Neil David

AU - Falko, Vladimir

N1 - © 2017 American Physical Society

PY - 2017/2/15

Y1 - 2017/2/15

N2 - Excitonic effects play a particularly important role in the optoelectronic behavior of two-dimensional (2D) semiconductors. To facilitate the interpretation of experimental photoabsorption and photoluminescence spectra we provide statistically exact diffusion quantum Monte Carlo binding-energy data for Mott-Wannier models of excitons, trions, and biexcitons in 2D semiconductors. We also provide contact pair densities to allow a description of contact (exchange) interactions between charge carriers using first-order perturbation theory. Our data indicate that the binding energy of a trion is generally larger than that of a biexciton in 2D semiconductors. We provide interpolation formulas giving the binding energy and contact density of 2D semiconductors as functions of the electron and hole effective masses and the in-plane polarizability.

AB - Excitonic effects play a particularly important role in the optoelectronic behavior of two-dimensional (2D) semiconductors. To facilitate the interpretation of experimental photoabsorption and photoluminescence spectra we provide statistically exact diffusion quantum Monte Carlo binding-energy data for Mott-Wannier models of excitons, trions, and biexcitons in 2D semiconductors. We also provide contact pair densities to allow a description of contact (exchange) interactions between charge carriers using first-order perturbation theory. Our data indicate that the binding energy of a trion is generally larger than that of a biexciton in 2D semiconductors. We provide interpolation formulas giving the binding energy and contact density of 2D semiconductors as functions of the electron and hole effective masses and the in-plane polarizability.

U2 - 10.1103/PhysRevB.95.081301

DO - 10.1103/PhysRevB.95.081301

M3 - Journal article

VL - 95

JO - Physical review B

JF - Physical review B

SN - 1098-0121

M1 - 081301

ER -