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Carrier statistics model for a bilayer graphine nanoribbon in the nondegenerate regime

Research output: Contribution to Journal/MagazineJournal articlepeer-review

  • H. Sadeghi
  • M. T. Ahmadi
  • J. F. Webb
  • S. M. Mousavi
  • R. Ismail
  • I. Ismail
<mark>Journal publication date</mark>20/06/2011
<mark>Journal</mark>AIP Conference Proceedings
Issue number184
Number of pages4
Pages (from-to)184-187
Publication StatusPublished
<mark>Original language</mark>English
Event4th Global Conference on Power Control and Optimization (PCO) - Kuching, Malaysia
Duration: 2/12/20104/12/2010


Conference4th Global Conference on Power Control and Optimization (PCO)


This paper focuses on the electronic transport properties of bilayer Graphene nanoribbons (BGNRs). The electronic transport of two dimensional AB stacked BGNRs with widths less than 10 nm is investigated. Due to the small width, the BGNR can be assumed to operate as a one dimensional device. A mathematical model of carrier concentration in BGNRs in the nondegenerate regime is presented. The model shows that in this regime the carrier statistics of BGNRs can be expressed by an exponential function of the normalized Fermi energy eta, which is particularly useful in the lower carrier concentration regions.