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Carrier statistics model for a bilayer graphine nanoribbon in the nondegenerate regime

Research output: Contribution to Journal/Magazine › Journal article › peer-review

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Carrier statistics model for a bilayer graphine nanoribbon in the nondegenerate regime. / Sadeghi, H.; Ahmadi, M. T.; Webb, J. F. et al.
In: AIP Conference Proceedings, Vol. 1337, No. 184, 20.06.2011, p. 184-187.

Research output: Contribution to Journal/Magazine › Journal article › peer-review

Harvard

Sadeghi, H, Ahmadi, MT, Webb, JF, Mousavi, SM, Ismail, R & Ismail, I 2011, 'Carrier statistics model for a bilayer graphine nanoribbon in the nondegenerate regime', AIP Conference Proceedings, vol. 1337, no. 184, pp. 184-187. https://doi.org/10.1063/1.3592464

APA

Sadeghi, H., Ahmadi, M. T., Webb, J. F., Mousavi, S. M., Ismail, R., & Ismail, I. (2011). Carrier statistics model for a bilayer graphine nanoribbon in the nondegenerate regime. AIP Conference Proceedings, 1337(184), 184-187. https://doi.org/10.1063/1.3592464

Vancouver

Sadeghi H, Ahmadi MT, Webb JF, Mousavi SM, Ismail R, Ismail I. Carrier statistics model for a bilayer graphine nanoribbon in the nondegenerate regime. AIP Conference Proceedings. 2011 Jun 20;1337(184):184-187. doi: 10.1063/1.3592464

Author

Sadeghi, H. ; Ahmadi, M. T. ; Webb, J. F. et al. / Carrier statistics model for a bilayer graphine nanoribbon in the nondegenerate regime. In: AIP Conference Proceedings. 2011 ; Vol. 1337, No. 184. pp. 184-187.

Bibtex

@article{7b2dd1d4b42246dba87c9b970fcbf3d9,
title = "Carrier statistics model for a bilayer graphine nanoribbon in the nondegenerate regime",
abstract = "This paper focuses on the electronic transport properties of bilayer Graphene nanoribbons (BGNRs). The electronic transport of two dimensional AB stacked BGNRs with widths less than 10 nm is investigated. Due to the small width, the BGNR can be assumed to operate as a one dimensional device. A mathematical model of carrier concentration in BGNRs in the nondegenerate regime is presented. The model shows that in this regime the carrier statistics of BGNRs can be expressed by an exponential function of the normalized Fermi energy eta, which is particularly useful in the lower carrier concentration regions.",
keywords = "Graphene nanoribbon, bilayer, carrier statistics, degenerate limit, field effect transistor, ELECTRONIC-PROPERTIES, GRAPHITE",
author = "H. Sadeghi and Ahmadi, {M. T.} and Webb, {J. F.} and Mousavi, {S. M.} and R. Ismail and I. Ismail",
year = "2011",
month = jun,
day = "20",
doi = "10.1063/1.3592464",
language = "English",
volume = "1337",
pages = "184--187",
journal = "AIP Conference Proceedings",
issn = "0094-243X",
publisher = "American Institute of Physics Publising LLC",
number = "184",
note = "4th Global Conference on Power Control and Optimization (PCO) ; Conference date: 02-12-2010 Through 04-12-2010",

}

RIS

TY - JOUR

T1 - Carrier statistics model for a bilayer graphine nanoribbon in the nondegenerate regime

AU - Sadeghi, H.

AU - Ahmadi, M. T.

AU - Webb, J. F.

AU - Mousavi, S. M.

AU - Ismail, R.

AU - Ismail, I.

PY - 2011/6/20

Y1 - 2011/6/20

N2 - This paper focuses on the electronic transport properties of bilayer Graphene nanoribbons (BGNRs). The electronic transport of two dimensional AB stacked BGNRs with widths less than 10 nm is investigated. Due to the small width, the BGNR can be assumed to operate as a one dimensional device. A mathematical model of carrier concentration in BGNRs in the nondegenerate regime is presented. The model shows that in this regime the carrier statistics of BGNRs can be expressed by an exponential function of the normalized Fermi energy eta, which is particularly useful in the lower carrier concentration regions.

AB - This paper focuses on the electronic transport properties of bilayer Graphene nanoribbons (BGNRs). The electronic transport of two dimensional AB stacked BGNRs with widths less than 10 nm is investigated. Due to the small width, the BGNR can be assumed to operate as a one dimensional device. A mathematical model of carrier concentration in BGNRs in the nondegenerate regime is presented. The model shows that in this regime the carrier statistics of BGNRs can be expressed by an exponential function of the normalized Fermi energy eta, which is particularly useful in the lower carrier concentration regions.

KW - Graphene nanoribbon

KW - bilayer

KW - carrier statistics

KW - degenerate limit

KW - field effect transistor

KW - ELECTRONIC-PROPERTIES

KW - GRAPHITE

U2 - 10.1063/1.3592464

DO - 10.1063/1.3592464

M3 - Journal article

VL - 1337

SP - 184

EP - 187

JO - AIP Conference Proceedings

JF - AIP Conference Proceedings

SN - 0094-243X

IS - 184

T2 - 4th Global Conference on Power Control and Optimization (PCO)

Y2 - 2 December 2010 through 4 December 2010

ER -