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Challenges in chip design for the AGIPD detector

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Challenges in chip design for the AGIPD detector. / Shi, X.; Dinapoli, R.; Henrich, B. et al.
In: Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, Vol. 624, No. 2, 11.12.2010, p. 387-391.

Research output: Contribution to Journal/MagazineJournal articlepeer-review

Harvard

Shi, X, Dinapoli, R, Henrich, B, Mozzanica, A, Schmitt, B, Mazzocco, R, Krüger, H, Trunk, U & Graafsma, H 2010, 'Challenges in chip design for the AGIPD detector', Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, vol. 624, no. 2, pp. 387-391. https://doi.org/10.1016/j.nima.2010.05.038

APA

Shi, X., Dinapoli, R., Henrich, B., Mozzanica, A., Schmitt, B., Mazzocco, R., Krüger, H., Trunk, U., & Graafsma, H. (2010). Challenges in chip design for the AGIPD detector. Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 624(2), 387-391. https://doi.org/10.1016/j.nima.2010.05.038

Vancouver

Shi X, Dinapoli R, Henrich B, Mozzanica A, Schmitt B, Mazzocco R et al. Challenges in chip design for the AGIPD detector. Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. 2010 Dec 11;624(2):387-391. doi: 10.1016/j.nima.2010.05.038

Author

Shi, X. ; Dinapoli, R. ; Henrich, B. et al. / Challenges in chip design for the AGIPD detector. In: Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. 2010 ; Vol. 624, No. 2. pp. 387-391.

Bibtex

@article{08313bbeeccf43a8ad48ef7d76cd55c7,
title = "Challenges in chip design for the AGIPD detector",
abstract = "Adaptive Gain Integrating Pixel Detector (AGIPD) is currently under development for the European X-ray Free Electron Laser (XFEL). It is a hybrid pixel detector with a specifically developed readout chip bump bonded to a silicon sensor. The chip is being designed in IBM View the MathML source CMOS technology. This paper is focused on the readout chip design. The main challenges for this chip are: the high dynamic range (1–1.4×104) with single photon sensitivity, the long storage chain (≥200) with a long hold time (99 ms), and the high radiation dose (up to 100 MGy). A charge integrating amplifier with a gain adaptive to the number of incoming photons is combined with a correlated double sampling (CDS) buffer to achieve the required dynamic range and single photon sensitivity. Several techniques are implemented in the storage cell design in order to reduce leakage current and signal-dependent charge injection. Four prototype chips have been designed for testing the performance of the implemented switches, capacitors, amplifiers, storage cells and periphery circuitry. The recently submitted test chip has a 16×16 pixel matrix, 100 storage cells in each pixel and a periphery circuitry for accessing and controlling the pixels and storage cells.",
keywords = "Hybrid pixel detector, CMOS , Charge integrating , Adaptive gain , Correlated double sampling , X-ray free electron laser",
author = "X. Shi and R. Dinapoli and B. Henrich and A. Mozzanica and B. Schmitt and R. Mazzocco and H. Kr{\"u}ger and U. Trunk and H. Graafsma",
year = "2010",
month = dec,
day = "11",
doi = "10.1016/j.nima.2010.05.038",
language = "English",
volume = "624",
pages = "387--391",
journal = "Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment",
issn = "0168-9002",
publisher = "ELSEVIER SCIENCE BV",
number = "2",

}

RIS

TY - JOUR

T1 - Challenges in chip design for the AGIPD detector

AU - Shi, X.

AU - Dinapoli, R.

AU - Henrich, B.

AU - Mozzanica, A.

AU - Schmitt, B.

AU - Mazzocco, R.

AU - Krüger, H.

AU - Trunk, U.

AU - Graafsma, H.

PY - 2010/12/11

Y1 - 2010/12/11

N2 - Adaptive Gain Integrating Pixel Detector (AGIPD) is currently under development for the European X-ray Free Electron Laser (XFEL). It is a hybrid pixel detector with a specifically developed readout chip bump bonded to a silicon sensor. The chip is being designed in IBM View the MathML source CMOS technology. This paper is focused on the readout chip design. The main challenges for this chip are: the high dynamic range (1–1.4×104) with single photon sensitivity, the long storage chain (≥200) with a long hold time (99 ms), and the high radiation dose (up to 100 MGy). A charge integrating amplifier with a gain adaptive to the number of incoming photons is combined with a correlated double sampling (CDS) buffer to achieve the required dynamic range and single photon sensitivity. Several techniques are implemented in the storage cell design in order to reduce leakage current and signal-dependent charge injection. Four prototype chips have been designed for testing the performance of the implemented switches, capacitors, amplifiers, storage cells and periphery circuitry. The recently submitted test chip has a 16×16 pixel matrix, 100 storage cells in each pixel and a periphery circuitry for accessing and controlling the pixels and storage cells.

AB - Adaptive Gain Integrating Pixel Detector (AGIPD) is currently under development for the European X-ray Free Electron Laser (XFEL). It is a hybrid pixel detector with a specifically developed readout chip bump bonded to a silicon sensor. The chip is being designed in IBM View the MathML source CMOS technology. This paper is focused on the readout chip design. The main challenges for this chip are: the high dynamic range (1–1.4×104) with single photon sensitivity, the long storage chain (≥200) with a long hold time (99 ms), and the high radiation dose (up to 100 MGy). A charge integrating amplifier with a gain adaptive to the number of incoming photons is combined with a correlated double sampling (CDS) buffer to achieve the required dynamic range and single photon sensitivity. Several techniques are implemented in the storage cell design in order to reduce leakage current and signal-dependent charge injection. Four prototype chips have been designed for testing the performance of the implemented switches, capacitors, amplifiers, storage cells and periphery circuitry. The recently submitted test chip has a 16×16 pixel matrix, 100 storage cells in each pixel and a periphery circuitry for accessing and controlling the pixels and storage cells.

KW - Hybrid pixel detector

KW - CMOS

KW - Charge integrating

KW - Adaptive gain

KW - Correlated double sampling

KW - X-ray free electron laser

U2 - 10.1016/j.nima.2010.05.038

DO - 10.1016/j.nima.2010.05.038

M3 - Journal article

VL - 624

SP - 387

EP - 391

JO - Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

JF - Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

SN - 0168-9002

IS - 2

ER -