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Characterisation of disorder in semiconductors via single-photon interferometry.

Research output: Contribution to Journal/MagazineJournal articlepeer-review

Published
  • P. Bozsoki
  • P. Thomas
  • M. Kira
  • W. Hoyer
  • T. Meier
  • S. W. Koch
  • K. Maschke
  • I. Varga
  • H. Stolz
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<mark>Journal publication date</mark>2006
<mark>Journal</mark>Physical review letters
Issue number22
Volume97
Pages (from-to)227402 (4 pages)
Publication StatusPublished
<mark>Original language</mark>English

Abstract

The method of angular photonic correlations of spontaneous emission is introduced as an experimental, purely optical scheme to characterize disorder in semiconductor nanostructures. The theoretical expression for the angular correlations is derived and numerically evaluated for a model system. The results demonstrate how the proposed experimental method yields direct information about the spatial distribution of the relevant states and thus on the disorder present in the system.