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    Rights statement: This is the author’s version of a work that was accepted for publication in Journal of Crystal Growth. Changes resulting from the publishing process, such as peer review, editing, corrections, structural formatting, and other quality control mechanisms may not be reflected in this document. Changes may have been made to this work since it was submitted for publication. A definitive version was subsequently published in Journal of Crystal Growth, 435, 2016 DOI: 10.1016/j.jcrysgro.2015.11.025

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Characterization of 6.1 Å III-V materials grown on GaAs and Si: a comparison of GaSb/GaAs epitaxy and GaSb/AlSb/Si epitaxy

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Characterization of 6.1 Å III-V materials grown on GaAs and Si: a comparison of GaSb/GaAs epitaxy and GaSb/AlSb/Si epitaxy. / Craig, Adam; Carrington, Peter James; Liu, Huiyun; Marshall, Andrew Robert Julian.

In: Journal of Crystal Growth, Vol. 435, 01.02.2016, p. 56-61.

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@article{51cbe612e1d241b0973bdec723c53bbc,
title = "Characterization of 6.1 {\AA} III-V materials grown on GaAs and Si: a comparison of GaSb/GaAs epitaxy and GaSb/AlSb/Si epitaxy",
abstract = "GaSb p–i–n photodiodes were grown on GaAs and Si, using interfacial misfit arrays, and on native GaSb. For the samples grown on GaAs and Si, high-resolution transmission electron microscopy images revealed interface atomic periodicities in agreement with atomistic modeling. Surface defect densities of ~View the MathML source were measured for both samples. Atomic force microscopy scans revealed surface roughnesses of around 1.6 nm, compared with 0.5 nm for the sample grown on native GaSb. Dark current and spectral response measurements were used to study the electrical and optoelectronic properties of all three samples.",
author = "Adam Craig and Carrington, {Peter James} and Huiyun Liu and Marshall, {Andrew Robert Julian}",
note = "This is the author{\textquoteright}s version of a work that was accepted for publication in Journal of Crystal Growth. Changes resulting from the publishing process, such as peer review, editing, corrections, structural formatting, and other quality control mechanisms may not be reflected in this document. Changes may have been made to this work since it was submitted for publication. A definitive version was subsequently published in Journal of Crystal Growth, 435, 2016 DOI: 10.1016/j.jcrysgro.2015.11.025",
year = "2016",
month = feb,
day = "1",
doi = "10.1016/j.jcrysgro.2015.11.025",
language = "English",
volume = "435",
pages = "56--61",
journal = "Journal of Crystal Growth",
issn = "0022-0248",
publisher = "Elsevier",

}

RIS

TY - JOUR

T1 - Characterization of 6.1 Å III-V materials grown on GaAs and Si: a comparison of GaSb/GaAs epitaxy and GaSb/AlSb/Si epitaxy

AU - Craig, Adam

AU - Carrington, Peter James

AU - Liu, Huiyun

AU - Marshall, Andrew Robert Julian

N1 - This is the author’s version of a work that was accepted for publication in Journal of Crystal Growth. Changes resulting from the publishing process, such as peer review, editing, corrections, structural formatting, and other quality control mechanisms may not be reflected in this document. Changes may have been made to this work since it was submitted for publication. A definitive version was subsequently published in Journal of Crystal Growth, 435, 2016 DOI: 10.1016/j.jcrysgro.2015.11.025

PY - 2016/2/1

Y1 - 2016/2/1

N2 - GaSb p–i–n photodiodes were grown on GaAs and Si, using interfacial misfit arrays, and on native GaSb. For the samples grown on GaAs and Si, high-resolution transmission electron microscopy images revealed interface atomic periodicities in agreement with atomistic modeling. Surface defect densities of ~View the MathML source were measured for both samples. Atomic force microscopy scans revealed surface roughnesses of around 1.6 nm, compared with 0.5 nm for the sample grown on native GaSb. Dark current and spectral response measurements were used to study the electrical and optoelectronic properties of all three samples.

AB - GaSb p–i–n photodiodes were grown on GaAs and Si, using interfacial misfit arrays, and on native GaSb. For the samples grown on GaAs and Si, high-resolution transmission electron microscopy images revealed interface atomic periodicities in agreement with atomistic modeling. Surface defect densities of ~View the MathML source were measured for both samples. Atomic force microscopy scans revealed surface roughnesses of around 1.6 nm, compared with 0.5 nm for the sample grown on native GaSb. Dark current and spectral response measurements were used to study the electrical and optoelectronic properties of all three samples.

U2 - 10.1016/j.jcrysgro.2015.11.025

DO - 10.1016/j.jcrysgro.2015.11.025

M3 - Journal article

VL - 435

SP - 56

EP - 61

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

SN - 0022-0248

ER -