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Characterization of Below-Bandgap Absorption in Type II GaSb Quantum Dots in GaAs Solar Cells

Research output: Contribution to Journal/Magazine › Journal article › peer-review

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Characterization of Below-Bandgap Absorption in Type II GaSb Quantum Dots in GaAs Solar Cells. / James, Juanita Saroj; Fujita, Hiromi; Carrington, Peter J. et al.
In: Physics, Vol. 6, No. 3, 19.07.2024, p. 990-998.

Research output: Contribution to Journal/Magazine › Journal article › peer-review

Harvard

James, JS, Fujita, H, Carrington, PJ, Marshall, ARJ, Krier, S & Krier, A 2024, 'Characterization of Below-Bandgap Absorption in Type II GaSb Quantum Dots in GaAs Solar Cells', Physics, vol. 6, no. 3, pp. 990-998. https://doi.org/10.3390/physics6030060

APA

James, J. S., Fujita, H., Carrington, P. J., Marshall, A. R. J., Krier, S., & Krier, A. (2024). Characterization of Below-Bandgap Absorption in Type II GaSb Quantum Dots in GaAs Solar Cells. Physics, 6(3), 990-998. https://doi.org/10.3390/physics6030060

Vancouver

James JS, Fujita H, Carrington PJ, Marshall ARJ, Krier S, Krier A. Characterization of Below-Bandgap Absorption in Type II GaSb Quantum Dots in GaAs Solar Cells. Physics. 2024 Jul 19;6(3):990-998. doi: 10.3390/physics6030060

Author

James, Juanita Saroj ; Fujita, Hiromi ; Carrington, Peter J. et al. / Characterization of Below-Bandgap Absorption in Type II GaSb Quantum Dots in GaAs Solar Cells. In: Physics. 2024 ; Vol. 6, No. 3. pp. 990-998.

Bibtex

@article{2a4bb066979b4e69ae9af43a66d81277,
title = "Characterization of Below-Bandgap Absorption in Type II GaSb Quantum Dots in GaAs Solar Cells",
abstract = "An approach to derive the below-bandgap absorption in GaSb/GaAs self-assembled quantum dot devices using room-temperature external quantum efficiency measurement results is presented. Devices with five layers of delta-doped quantum dots placed in the intrinsic, n- and p-regions of a GaAs solar cell are studied. The importance of incorporating an extended Urbach tail absorption in analyzing the absorption strength of quantum dots and the transition states is demonstrated. The theoretically integrated absorbance via quantum dot ground states is calculated as 1.04 × 1015 cm−1s−1, which is in reasonable agreement with the experimentally derived value 8.1 × 1015 cm−1s−1. The wetting layer and quantum dot absorption contributions are separated from the tail absorption and their transition energies are calculated. Using these transition energies and the GaAs energy gap of 1.42 eV, the heavy hole confinement energies for the quantum dots (320 meV) and for the wetting layer (120 meV) are estimated.",
author = "James, {Juanita Saroj} and Hiromi Fujita and Carrington, {Peter J.} and Marshall, {Andrew R. J.} and Susan Krier and Anthony Krier",
year = "2024",
month = jul,
day = "19",
doi = "10.3390/physics6030060",
language = "English",
volume = "6",
pages = "990--998",
journal = "Physics",
issn = "2624-8174",
publisher = "MDPI AG",
number = "3",

}

RIS

TY - JOUR

T1 - Characterization of Below-Bandgap Absorption in Type II GaSb Quantum Dots in GaAs Solar Cells

AU - James, Juanita Saroj

AU - Fujita, Hiromi

AU - Carrington, Peter J.

AU - Marshall, Andrew R. J.

AU - Krier, Susan

AU - Krier, Anthony

PY - 2024/7/19

Y1 - 2024/7/19

N2 - An approach to derive the below-bandgap absorption in GaSb/GaAs self-assembled quantum dot devices using room-temperature external quantum efficiency measurement results is presented. Devices with five layers of delta-doped quantum dots placed in the intrinsic, n- and p-regions of a GaAs solar cell are studied. The importance of incorporating an extended Urbach tail absorption in analyzing the absorption strength of quantum dots and the transition states is demonstrated. The theoretically integrated absorbance via quantum dot ground states is calculated as 1.04 × 1015 cm−1s−1, which is in reasonable agreement with the experimentally derived value 8.1 × 1015 cm−1s−1. The wetting layer and quantum dot absorption contributions are separated from the tail absorption and their transition energies are calculated. Using these transition energies and the GaAs energy gap of 1.42 eV, the heavy hole confinement energies for the quantum dots (320 meV) and for the wetting layer (120 meV) are estimated.

AB - An approach to derive the below-bandgap absorption in GaSb/GaAs self-assembled quantum dot devices using room-temperature external quantum efficiency measurement results is presented. Devices with five layers of delta-doped quantum dots placed in the intrinsic, n- and p-regions of a GaAs solar cell are studied. The importance of incorporating an extended Urbach tail absorption in analyzing the absorption strength of quantum dots and the transition states is demonstrated. The theoretically integrated absorbance via quantum dot ground states is calculated as 1.04 × 1015 cm−1s−1, which is in reasonable agreement with the experimentally derived value 8.1 × 1015 cm−1s−1. The wetting layer and quantum dot absorption contributions are separated from the tail absorption and their transition energies are calculated. Using these transition energies and the GaAs energy gap of 1.42 eV, the heavy hole confinement energies for the quantum dots (320 meV) and for the wetting layer (120 meV) are estimated.

U2 - 10.3390/physics6030060

DO - 10.3390/physics6030060

M3 - Journal article

VL - 6

SP - 990

EP - 998

JO - Physics

JF - Physics

SN - 2624-8174

IS - 3

ER -