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Characterization of ultrasmall all-Nb tunnel junctions with ion gun oxidized barriers

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Article number112113
<mark>Journal publication date</mark>13/03/2006
<mark>Journal</mark>Applied Physics Letters
Issue number11
Volume88
Number of pages3
Publication StatusPublished
<mark>Original language</mark>English

Abstract

We have fabricated ultrasmall all-Nb tunnel junctions and single electron transistors using shadow
evaporation combined with in situ ion gun oxidation. Basic parameters of the Nb/Nb-oxide/Nb
junctions, namely, the barrier height, width, and specific junction capacitance, are estimated from
the transport characteristics.