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Characterization of ultrasmall all-Nb tunnel junctions with ion gun oxidized barriers

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Characterization of ultrasmall all-Nb tunnel junctions with ion gun oxidized barriers. / Im, Hyunsik; Pashkin, Yuri; Yamamoto, T. et al.
In: Applied Physics Letters, Vol. 88, No. 11, 112113, 13.03.2006.

Research output: Contribution to Journal/Magazine › Journal article › peer-review

Harvard

Im, H, Pashkin, Y, Yamamoto, T, Astafiev, OV, Nakamura, Y & Tsai, J-S 2006, 'Characterization of ultrasmall all-Nb tunnel junctions with ion gun oxidized barriers', Applied Physics Letters, vol. 88, no. 11, 112113. https://doi.org/10.1063/1.2186507

APA

Im, H., Pashkin, Y., Yamamoto, T., Astafiev, O. V., Nakamura, Y., & Tsai, J.-S. (2006). Characterization of ultrasmall all-Nb tunnel junctions with ion gun oxidized barriers. Applied Physics Letters, 88(11), Article 112113. https://doi.org/10.1063/1.2186507

Vancouver

Im H, Pashkin Y, Yamamoto T, Astafiev OV, Nakamura Y, Tsai JS. Characterization of ultrasmall all-Nb tunnel junctions with ion gun oxidized barriers. Applied Physics Letters. 2006 Mar 13;88(11):112113. doi: 10.1063/1.2186507

Author

Im, Hyunsik ; Pashkin, Yuri ; Yamamoto, T. et al. / Characterization of ultrasmall all-Nb tunnel junctions with ion gun oxidized barriers. In: Applied Physics Letters. 2006 ; Vol. 88, No. 11.

Bibtex

@article{c1107ad43a534b259676907580f8fc98,
title = "Characterization of ultrasmall all-Nb tunnel junctions with ion gun oxidized barriers",
abstract = "We have fabricated ultrasmall all-Nb tunnel junctions and single electron transistors using shadowevaporation combined with in situ ion gun oxidation. Basic parameters of the Nb/Nb-oxide/Nbjunctions, namely, the barrier height, width, and specific junction capacitance, are estimated fromthe transport characteristics.",
author = "Hyunsik Im and Yuri Pashkin and T. Yamamoto and Astafiev, {Oleg V.} and Y. Nakamura and Jaw-Shen Tsai",
year = "2006",
month = mar,
day = "13",
doi = "10.1063/1.2186507",
language = "English",
volume = "88",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Inc.",
number = "11",

}

RIS

TY - JOUR

T1 - Characterization of ultrasmall all-Nb tunnel junctions with ion gun oxidized barriers

AU - Im, Hyunsik

AU - Pashkin, Yuri

AU - Yamamoto, T.

AU - Astafiev, Oleg V.

AU - Nakamura, Y.

AU - Tsai, Jaw-Shen

PY - 2006/3/13

Y1 - 2006/3/13

N2 - We have fabricated ultrasmall all-Nb tunnel junctions and single electron transistors using shadowevaporation combined with in situ ion gun oxidation. Basic parameters of the Nb/Nb-oxide/Nbjunctions, namely, the barrier height, width, and specific junction capacitance, are estimated fromthe transport characteristics.

AB - We have fabricated ultrasmall all-Nb tunnel junctions and single electron transistors using shadowevaporation combined with in situ ion gun oxidation. Basic parameters of the Nb/Nb-oxide/Nbjunctions, namely, the barrier height, width, and specific junction capacitance, are estimated fromthe transport characteristics.

U2 - 10.1063/1.2186507

DO - 10.1063/1.2186507

M3 - Journal article

VL - 88

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 11

M1 - 112113

ER -