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  • HVCMOS-CCE-JINST_R1

    Rights statement: This is an author-created, un-copyedited version of an article accepted for publication/published in Journal of Instrumentation. IOP Publishing Ltd is not responsible for any errors or omissions in this version of the manuscript or any version derived from it. The Version of Record is available online at doi: 10.1088/1748-0221/11/04/P04007

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Charge collection studies in irradiated HV-CMOS particle detectors

Research output: Contribution to Journal/MagazineJournal articlepeer-review

Published
Article numberP04007
<mark>Journal publication date</mark>4/04/2016
<mark>Journal</mark>Journal of Instrumentation
Volume11
Number of pages17
Publication StatusPublished
<mark>Original language</mark>English

Abstract

Charge collection properties of particle detectors made in HV-CMOS technology were
investigated before and after irradiation with reactor neutrons. Two different sensor types were
designed and processed in 180 and 350 nm technology by AMS. Edge-TCT and charge collection
measurements with electrons from 90Sr source were employed. Diffusion of generated carriers from undepleted substrate contributes significantly to the charge collection before irradiation, while after irradiation the drift contribution prevails as shown by charge measurements at different shaping times. The depleted region at a given bias voltage was found to grow with irradiation in the fluence range of interest for strip detectors at the HL-LHC. This leads to large gains in the measured charge with respect to the one before irradiation. The increase of the depleted region was attributed to removal of effective acceptors. The evolution of depleted region with fluence was investigated and modeled. Initial studies show a small effect of short term annealing on charge collection.

Bibliographic note

This is an author-created, un-copyedited version of an article accepted for publication/published in Journal of Instrumentation. IOP Publishing Ltd is not responsible for any errors or omissions in this version of the manuscript or any version derived from it. The Version of Record is available online at doi: 10.1088/1748-0221/11/04/P04007