Rights statement: This is an author-created, un-copyedited version of an article accepted for publication/published in Journal of Instrumentation. IOP Publishing Ltd is not responsible for any errors or omissions in this version of the manuscript or any version derived from it. The Version of Record is available online at doi: 10.1088/1748-0221/11/04/P04007
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Research output: Contribution to Journal/Magazine › Journal article › peer-review
Research output: Contribution to Journal/Magazine › Journal article › peer-review
}
TY - JOUR
T1 - Charge collection studies in irradiated HV-CMOS particle detectors
AU - Muenstermann, Daniel Matthias Alfred
N1 - This is an author-created, un-copyedited version of an article accepted for publication/published in Journal of Instrumentation. IOP Publishing Ltd is not responsible for any errors or omissions in this version of the manuscript or any version derived from it. The Version of Record is available online at doi: 10.1088/1748-0221/11/04/P04007
PY - 2016/4/4
Y1 - 2016/4/4
N2 - Charge collection properties of particle detectors made in HV-CMOS technology wereinvestigated before and after irradiation with reactor neutrons. Two different sensor types weredesigned and processed in 180 and 350 nm technology by AMS. Edge-TCT and charge collectionmeasurements with electrons from 90Sr source were employed. Diffusion of generated carriers from undepleted substrate contributes significantly to the charge collection before irradiation, while after irradiation the drift contribution prevails as shown by charge measurements at different shaping times. The depleted region at a given bias voltage was found to grow with irradiation in the fluence range of interest for strip detectors at the HL-LHC. This leads to large gains in the measured charge with respect to the one before irradiation. The increase of the depleted region was attributed to removal of effective acceptors. The evolution of depleted region with fluence was investigated and modeled. Initial studies show a small effect of short term annealing on charge collection.
AB - Charge collection properties of particle detectors made in HV-CMOS technology wereinvestigated before and after irradiation with reactor neutrons. Two different sensor types weredesigned and processed in 180 and 350 nm technology by AMS. Edge-TCT and charge collectionmeasurements with electrons from 90Sr source were employed. Diffusion of generated carriers from undepleted substrate contributes significantly to the charge collection before irradiation, while after irradiation the drift contribution prevails as shown by charge measurements at different shaping times. The depleted region at a given bias voltage was found to grow with irradiation in the fluence range of interest for strip detectors at the HL-LHC. This leads to large gains in the measured charge with respect to the one before irradiation. The increase of the depleted region was attributed to removal of effective acceptors. The evolution of depleted region with fluence was investigated and modeled. Initial studies show a small effect of short term annealing on charge collection.
U2 - 10.1088/1748-0221/11/04/P04007
DO - 10.1088/1748-0221/11/04/P04007
M3 - Journal article
VL - 11
JO - Journal of Instrumentation
JF - Journal of Instrumentation
SN - 1748-0221
M1 - P04007
ER -