Home > Research > Publications & Outputs > Classic and quantum capacitances in Bernal bila...

Electronic data

  • 127690

    Rights statement: Copyright © 2013 Hatef Sadeghi et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

    Final published version, 1.64 MB, PDF document

    Available under license: CC BY

Links

Text available via DOI:

View graph of relations

Classic and quantum capacitances in Bernal bilayer and trilayer graphene field effect transistor

Research output: Contribution to Journal/MagazineJournal articlepeer-review

Published
  • Hatef Sadeghi
  • Daniel T. H. Lai
  • Jean-Michel Redoute
  • Aladin Zayegh
Close
Article number127690
<mark>Journal publication date</mark>2013
<mark>Journal</mark>Journal of Nanomaterials
Volume2013
Number of pages7
Publication StatusPublished
<mark>Original language</mark>English

Abstract

Our focus in this study is on characterizing the capacitance voltage (C-V) behavior of Bernal stacking bilayer graphene (BG) and trilayer graphene (TG) as the channel of FET devices. The analytical models of quantum capacitance (QC) of BG and TG are presented. Although QC is smaller than the classic capacitance in conventional devices, its contribution to the total metal oxide semiconductor capacitor in graphene-based FET devices becomes significant in the nanoscale. Our calculation shows that QC increases with gate voltage in both BG and TG and decreases with temperature with some fluctuations. However, in bilayer graphene the fluctuation is higher due to its tunable band structure with external electric fields. In similar temperature and size, QC in metal oxide BG is higher than metal oxide TG configuration. Moreover, in both BG and TG, total capacitance is more affected by classic capacitance as the distance between gate electrode and channel increases. However, QC is more dominant when the channel becomes thinner into the nanoscale, and therefore we mostly deal with quantum capacitance in top gate in contrast with bottom gate that the classic capacitance is dominant.

Bibliographic note

Copyright © 2013 Hatef Sadeghi et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.