Rights statement: Copyright © 2013 Hatef Sadeghi et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
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Research output: Contribution to Journal/Magazine › Journal article › peer-review
Research output: Contribution to Journal/Magazine › Journal article › peer-review
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TY - JOUR
T1 - Classic and quantum capacitances in Bernal bilayer and trilayer graphene field effect transistor
AU - Sadeghi, Hatef
AU - Lai, Daniel T. H.
AU - Redoute, Jean-Michel
AU - Zayegh, Aladin
N1 - Copyright © 2013 Hatef Sadeghi et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
PY - 2013
Y1 - 2013
N2 - Our focus in this study is on characterizing the capacitance voltage (C-V) behavior of Bernal stacking bilayer graphene (BG) and trilayer graphene (TG) as the channel of FET devices. The analytical models of quantum capacitance (QC) of BG and TG are presented. Although QC is smaller than the classic capacitance in conventional devices, its contribution to the total metal oxide semiconductor capacitor in graphene-based FET devices becomes significant in the nanoscale. Our calculation shows that QC increases with gate voltage in both BG and TG and decreases with temperature with some fluctuations. However, in bilayer graphene the fluctuation is higher due to its tunable band structure with external electric fields. In similar temperature and size, QC in metal oxide BG is higher than metal oxide TG configuration. Moreover, in both BG and TG, total capacitance is more affected by classic capacitance as the distance between gate electrode and channel increases. However, QC is more dominant when the channel becomes thinner into the nanoscale, and therefore we mostly deal with quantum capacitance in top gate in contrast with bottom gate that the classic capacitance is dominant.
AB - Our focus in this study is on characterizing the capacitance voltage (C-V) behavior of Bernal stacking bilayer graphene (BG) and trilayer graphene (TG) as the channel of FET devices. The analytical models of quantum capacitance (QC) of BG and TG are presented. Although QC is smaller than the classic capacitance in conventional devices, its contribution to the total metal oxide semiconductor capacitor in graphene-based FET devices becomes significant in the nanoscale. Our calculation shows that QC increases with gate voltage in both BG and TG and decreases with temperature with some fluctuations. However, in bilayer graphene the fluctuation is higher due to its tunable band structure with external electric fields. In similar temperature and size, QC in metal oxide BG is higher than metal oxide TG configuration. Moreover, in both BG and TG, total capacitance is more affected by classic capacitance as the distance between gate electrode and channel increases. However, QC is more dominant when the channel becomes thinner into the nanoscale, and therefore we mostly deal with quantum capacitance in top gate in contrast with bottom gate that the classic capacitance is dominant.
U2 - 10.1155/2013/127690
DO - 10.1155/2013/127690
M3 - Journal article
VL - 2013
JO - Journal of Nanomaterials
JF - Journal of Nanomaterials
SN - 1687-4110
M1 - 127690
ER -