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Clean assembly of van der Waals heterostructures using silicon nitride membranes

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  • Wendong Wang
  • Nicholas Clark
  • Amy Carl
  • Endre Tovari
  • Sam Sullivan-Allsop
  • Evan Tillotson
  • Yunze Gao
  • Hugo de Latour
  • Francisco Selles
  • James Howarth
  • Eli G. Castanon
  • Mingwei Zhou
  • Haoyu Bai
  • Xiao Li
  • Astrid Weston
  • Kenji Watanabe
  • Takashi Taniguchi
  • Cecilia Mattevi
  • Thomas H. Bointon
  • Paul V. Wiper
  • Andrew J. Strudwick
  • Andrey V. Kretinin
  • Sarah J. Haigh
  • Alex Summerfield
  • Roman Gorbachev
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<mark>Journal publication date</mark>31/12/2023
<mark>Journal</mark>Nature Electronics
Issue number12
Volume6
Number of pages10
Pages (from-to)981-990
Publication StatusPublished
Early online date5/12/23
<mark>Original language</mark>English

Abstract

Van der Waals heterostructures are fabricated by layer-by-layer assembly of individual two-dimensional materials and can be used to create a wide range of electronic devices. However, current assembly techniques typically use polymeric supports, which limit the cleanliness—and thus the electronic performance—of such devices. Here, we report a polymer-free technique for assembling van der Waals heterostructures using flexible silicon nitride membranes. Eliminating the polymeric supports allows the heterostructures to be fabricated in harsher environmental conditions (incompatible with a polymer) such as at temperatures of up to 600 °C, in organic solvents and in ultra-high vacuum. The resulting heterostructures have high-quality interfaces without interlayer contamination and exhibit strong electronic and optoelectronic behaviour. We use the technique to assemble twisted-graphene heterostructures in ultra-high vacuum, resulting in a tenfold improvement in moiré superlattice homogeneity compared to conventional transfer techniques.