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Clean assembly of van der Waals heterostructures using silicon nitride membranes

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Clean assembly of van der Waals heterostructures using silicon nitride membranes. / Wang, Wendong; Clark, Nicholas; Hamer, Matthew et al.
In: Nature Electronics, Vol. 6, No. 12, 31.12.2023, p. 981-990.

Research output: Contribution to Journal/MagazineJournal articlepeer-review

Harvard

Wang, W, Clark, N, Hamer, M, Carl, A, Tovari, E, Sullivan-Allsop, S, Tillotson, E, Gao, Y, de Latour, H, Selles, F, Howarth, J, Castanon, EG, Zhou, M, Bai, H, Li, X, Weston, A, Watanabe, K, Taniguchi, T, Mattevi, C, Bointon, TH, Wiper, PV, Strudwick, AJ, Ponomarenko, LA, Kretinin, AV, Haigh, SJ, Summerfield, A & Gorbachev, R 2023, 'Clean assembly of van der Waals heterostructures using silicon nitride membranes', Nature Electronics, vol. 6, no. 12, pp. 981-990. https://doi.org/10.1038/s41928-023-01075-y

APA

Wang, W., Clark, N., Hamer, M., Carl, A., Tovari, E., Sullivan-Allsop, S., Tillotson, E., Gao, Y., de Latour, H., Selles, F., Howarth, J., Castanon, E. G., Zhou, M., Bai, H., Li, X., Weston, A., Watanabe, K., Taniguchi, T., Mattevi, C., ... Gorbachev, R. (2023). Clean assembly of van der Waals heterostructures using silicon nitride membranes. Nature Electronics, 6(12), 981-990. https://doi.org/10.1038/s41928-023-01075-y

Vancouver

Wang W, Clark N, Hamer M, Carl A, Tovari E, Sullivan-Allsop S et al. Clean assembly of van der Waals heterostructures using silicon nitride membranes. Nature Electronics. 2023 Dec 31;6(12):981-990. Epub 2023 Dec 5. doi: 10.1038/s41928-023-01075-y

Author

Wang, Wendong ; Clark, Nicholas ; Hamer, Matthew et al. / Clean assembly of van der Waals heterostructures using silicon nitride membranes. In: Nature Electronics. 2023 ; Vol. 6, No. 12. pp. 981-990.

Bibtex

@article{cb7dc4aa63db4887b1850a6aaf143b88,
title = "Clean assembly of van der Waals heterostructures using silicon nitride membranes",
abstract = "Van der Waals heterostructures are fabricated by layer-by-layer assembly of individual two-dimensional materials and can be used to create a wide range of electronic devices. However, current assembly techniques typically use polymeric supports, which limit the cleanliness—and thus the electronic performance—of such devices. Here, we report a polymer-free technique for assembling van der Waals heterostructures using flexible silicon nitride membranes. Eliminating the polymeric supports allows the heterostructures to be fabricated in harsher environmental conditions (incompatible with a polymer) such as at temperatures of up to 600 °C, in organic solvents and in ultra-high vacuum. The resulting heterostructures have high-quality interfaces without interlayer contamination and exhibit strong electronic and optoelectronic behaviour. We use the technique to assemble twisted-graphene heterostructures in ultra-high vacuum, resulting in a tenfold improvement in moir{\'e} superlattice homogeneity compared to conventional transfer techniques.",
author = "Wendong Wang and Nicholas Clark and Matthew Hamer and Amy Carl and Endre Tovari and Sam Sullivan-Allsop and Evan Tillotson and Yunze Gao and {de Latour}, Hugo and Francisco Selles and James Howarth and Castanon, {Eli G.} and Mingwei Zhou and Haoyu Bai and Xiao Li and Astrid Weston and Kenji Watanabe and Takashi Taniguchi and Cecilia Mattevi and Bointon, {Thomas H.} and Wiper, {Paul V.} and Strudwick, {Andrew J.} and Ponomarenko, {Leonid A.} and Kretinin, {Andrey V.} and Haigh, {Sarah J.} and Alex Summerfield and Roman Gorbachev",
year = "2023",
month = dec,
day = "31",
doi = "10.1038/s41928-023-01075-y",
language = "English",
volume = "6",
pages = "981--990",
journal = "Nature Electronics",
issn = "2520-1131",
publisher = "Springer Nature",
number = "12",

}

RIS

TY - JOUR

T1 - Clean assembly of van der Waals heterostructures using silicon nitride membranes

AU - Wang, Wendong

AU - Clark, Nicholas

AU - Hamer, Matthew

AU - Carl, Amy

AU - Tovari, Endre

AU - Sullivan-Allsop, Sam

AU - Tillotson, Evan

AU - Gao, Yunze

AU - de Latour, Hugo

AU - Selles, Francisco

AU - Howarth, James

AU - Castanon, Eli G.

AU - Zhou, Mingwei

AU - Bai, Haoyu

AU - Li, Xiao

AU - Weston, Astrid

AU - Watanabe, Kenji

AU - Taniguchi, Takashi

AU - Mattevi, Cecilia

AU - Bointon, Thomas H.

AU - Wiper, Paul V.

AU - Strudwick, Andrew J.

AU - Ponomarenko, Leonid A.

AU - Kretinin, Andrey V.

AU - Haigh, Sarah J.

AU - Summerfield, Alex

AU - Gorbachev, Roman

PY - 2023/12/31

Y1 - 2023/12/31

N2 - Van der Waals heterostructures are fabricated by layer-by-layer assembly of individual two-dimensional materials and can be used to create a wide range of electronic devices. However, current assembly techniques typically use polymeric supports, which limit the cleanliness—and thus the electronic performance—of such devices. Here, we report a polymer-free technique for assembling van der Waals heterostructures using flexible silicon nitride membranes. Eliminating the polymeric supports allows the heterostructures to be fabricated in harsher environmental conditions (incompatible with a polymer) such as at temperatures of up to 600 °C, in organic solvents and in ultra-high vacuum. The resulting heterostructures have high-quality interfaces without interlayer contamination and exhibit strong electronic and optoelectronic behaviour. We use the technique to assemble twisted-graphene heterostructures in ultra-high vacuum, resulting in a tenfold improvement in moiré superlattice homogeneity compared to conventional transfer techniques.

AB - Van der Waals heterostructures are fabricated by layer-by-layer assembly of individual two-dimensional materials and can be used to create a wide range of electronic devices. However, current assembly techniques typically use polymeric supports, which limit the cleanliness—and thus the electronic performance—of such devices. Here, we report a polymer-free technique for assembling van der Waals heterostructures using flexible silicon nitride membranes. Eliminating the polymeric supports allows the heterostructures to be fabricated in harsher environmental conditions (incompatible with a polymer) such as at temperatures of up to 600 °C, in organic solvents and in ultra-high vacuum. The resulting heterostructures have high-quality interfaces without interlayer contamination and exhibit strong electronic and optoelectronic behaviour. We use the technique to assemble twisted-graphene heterostructures in ultra-high vacuum, resulting in a tenfold improvement in moiré superlattice homogeneity compared to conventional transfer techniques.

U2 - 10.1038/s41928-023-01075-y

DO - 10.1038/s41928-023-01075-y

M3 - Journal article

VL - 6

SP - 981

EP - 990

JO - Nature Electronics

JF - Nature Electronics

SN - 2520-1131

IS - 12

ER -