Home > Research > Publications & Outputs > Controlled Quantum Dot Formation in Atomically ...

Associated organisational unit


Text available via DOI:

View graph of relations

Controlled Quantum Dot Formation in Atomically Engineered Graphene Nanoribbon Field-Effect Transistors

Research output: Contribution to Journal/MagazineJournal articlepeer-review

  • M. El Abbassi
  • M.L. Perrin
  • G.B. Barin
  • S. Sangtarash
  • J. Overbeck
  • O. Braun
  • C.J. Lambert
  • Q. Sun
  • T. Prechtl
  • A. Narita
  • K. Müllen
  • P. Ruffieux
  • H. Sadeghi
  • R. Fasel
  • M. Calame
<mark>Journal publication date</mark>26/05/2020
<mark>Journal</mark>ACS Nano
Issue number5
Number of pages9
Pages (from-to)5754-5762
Publication StatusPublished
Early online date30/03/20
<mark>Original language</mark>English


Graphene nanoribbons (GNRs) have attracted strong interest from researchers worldwide, as they constitute an emerging class of quantum-designed materials. The major challenges toward their exploitation in electronic applications include reliable contacting, complicated by their small size (