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Controlled Quantum Dot Formation in Atomically Engineered Graphene Nanoribbon Field-Effect Transistors

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Controlled Quantum Dot Formation in Atomically Engineered Graphene Nanoribbon Field-Effect Transistors. / El Abbassi, M.; Perrin, M.L.; Barin, G.B.; Sangtarash, S.; Overbeck, J.; Braun, O.; Lambert, C.J.; Sun, Q.; Prechtl, T.; Narita, A.; Müllen, K.; Ruffieux, P.; Sadeghi, H.; Fasel, R.; Calame, M.

In: ACS Nano, Vol. 14, No. 5, 26.05.2020, p. 5754-5762.

Research output: Contribution to journalJournal articlepeer-review

Harvard

El Abbassi, M, Perrin, ML, Barin, GB, Sangtarash, S, Overbeck, J, Braun, O, Lambert, CJ, Sun, Q, Prechtl, T, Narita, A, Müllen, K, Ruffieux, P, Sadeghi, H, Fasel, R & Calame, M 2020, 'Controlled Quantum Dot Formation in Atomically Engineered Graphene Nanoribbon Field-Effect Transistors', ACS Nano, vol. 14, no. 5, pp. 5754-5762. https://doi.org/10.1021/acsnano.0c00604

APA

El Abbassi, M., Perrin, M. L., Barin, G. B., Sangtarash, S., Overbeck, J., Braun, O., Lambert, C. J., Sun, Q., Prechtl, T., Narita, A., Müllen, K., Ruffieux, P., Sadeghi, H., Fasel, R., & Calame, M. (2020). Controlled Quantum Dot Formation in Atomically Engineered Graphene Nanoribbon Field-Effect Transistors. ACS Nano, 14(5), 5754-5762. https://doi.org/10.1021/acsnano.0c00604

Vancouver

Author

El Abbassi, M. ; Perrin, M.L. ; Barin, G.B. ; Sangtarash, S. ; Overbeck, J. ; Braun, O. ; Lambert, C.J. ; Sun, Q. ; Prechtl, T. ; Narita, A. ; Müllen, K. ; Ruffieux, P. ; Sadeghi, H. ; Fasel, R. ; Calame, M. / Controlled Quantum Dot Formation in Atomically Engineered Graphene Nanoribbon Field-Effect Transistors. In: ACS Nano. 2020 ; Vol. 14, No. 5. pp. 5754-5762.

Bibtex

@article{70a7a4e3b1a84779a8a52d7b84509276,
title = "Controlled Quantum Dot Formation in Atomically Engineered Graphene Nanoribbon Field-Effect Transistors",
abstract = "Graphene nanoribbons (GNRs) have attracted strong interest from researchers worldwide, as they constitute an emerging class of quantum-designed materials. The major challenges toward their exploitation in electronic applications include reliable contacting, complicated by their small size (",
keywords = "Coulomb blockade, device integration, graphene nanoribbons, molecular spectroscopy, Raman spectroscopy",
author = "{El Abbassi}, M. and M.L. Perrin and G.B. Barin and S. Sangtarash and J. Overbeck and O. Braun and C.J. Lambert and Q. Sun and T. Prechtl and A. Narita and K. M{\"u}llen and P. Ruffieux and H. Sadeghi and R. Fasel and M. Calame",
year = "2020",
month = may,
day = "26",
doi = "10.1021/acsnano.0c00604",
language = "English",
volume = "14",
pages = "5754--5762",
journal = "ACS Nano",
issn = "1936-0851",
publisher = "American Chemical Society",
number = "5",

}

RIS

TY - JOUR

T1 - Controlled Quantum Dot Formation in Atomically Engineered Graphene Nanoribbon Field-Effect Transistors

AU - El Abbassi, M.

AU - Perrin, M.L.

AU - Barin, G.B.

AU - Sangtarash, S.

AU - Overbeck, J.

AU - Braun, O.

AU - Lambert, C.J.

AU - Sun, Q.

AU - Prechtl, T.

AU - Narita, A.

AU - Müllen, K.

AU - Ruffieux, P.

AU - Sadeghi, H.

AU - Fasel, R.

AU - Calame, M.

PY - 2020/5/26

Y1 - 2020/5/26

N2 - Graphene nanoribbons (GNRs) have attracted strong interest from researchers worldwide, as they constitute an emerging class of quantum-designed materials. The major challenges toward their exploitation in electronic applications include reliable contacting, complicated by their small size (

AB - Graphene nanoribbons (GNRs) have attracted strong interest from researchers worldwide, as they constitute an emerging class of quantum-designed materials. The major challenges toward their exploitation in electronic applications include reliable contacting, complicated by their small size (

KW - Coulomb blockade

KW - device integration

KW - graphene nanoribbons

KW - molecular spectroscopy

KW - Raman spectroscopy

U2 - 10.1021/acsnano.0c00604

DO - 10.1021/acsnano.0c00604

M3 - Journal article

VL - 14

SP - 5754

EP - 5762

JO - ACS Nano

JF - ACS Nano

SN - 1936-0851

IS - 5

ER -