Home > Research > Publications & Outputs > Corbino field-effect transistors in a magnetic ...

Research

Associated organisational units

Electronic data

  • main

    Rights statement: © 2021 American Physical Society

    Accepted author manuscript, 1.56 MB, PDF document

    Available under license: CC BY-NC: Creative Commons Attribution-NonCommercial 4.0 International License

Links

Text available via DOI:

View graph of relations

Corbino field-effect transistors in a magnetic field: Highly tunable photodetectors

Research output: Contribution to Journal/Magazine › Journal article › peer-review

Published

Standard

Corbino field-effect transistors in a magnetic field: Highly tunable photodetectors. / Winstanley, B.; Schomerus, H.; Principi, A.
In: Physical review B, Vol. 104, No. 16, 165406, 15.10.2021.

Research output: Contribution to Journal/Magazine › Journal article › peer-review

Harvard

Winstanley, B, Schomerus, H & Principi, A 2021, 'Corbino field-effect transistors in a magnetic field: Highly tunable photodetectors', Physical review B, vol. 104, no. 16, 165406. https://doi.org/10.1103/PhysRevB.104.165406

APA

Winstanley, B., Schomerus, H., & Principi, A. (2021). Corbino field-effect transistors in a magnetic field: Highly tunable photodetectors. Physical review B, 104(16), Article 165406. https://doi.org/10.1103/PhysRevB.104.165406

Vancouver

Winstanley B, Schomerus H, Principi A. Corbino field-effect transistors in a magnetic field: Highly tunable photodetectors. Physical review B. 2021 Oct 15;104(16):165406. Epub 2021 Oct 5. doi: 10.1103/PhysRevB.104.165406

Author

Winstanley, B. ; Schomerus, H. ; Principi, A. / Corbino field-effect transistors in a magnetic field : Highly tunable photodetectors. In: Physical review B. 2021 ; Vol. 104, No. 16.

Bibtex

@article{e8fbe1811bf44713a5aa2c6ca58789f2,
title = "Corbino field-effect transistors in a magnetic field: Highly tunable photodetectors",
abstract = "We study gated field-effect transistors (FETs) with an eccentric Corbino-disk geometry, such that the drain spans its circumference while the off-center inner ring acts as a source. An alternating current terahertz potential difference is applied between source and gate while a static source-drain voltage, rectified by the nonlinearities of FET electrons, is measured. When a magnetic field is applied perpendicular to the device, a strong resonance appears at the cyclotron frequency. The strength of the resonance can be tuned by changing the eccentricity of the disk. We show that there is an optimum value of the eccentricity that maximizes the responsivity of the FET.",
author = "B. Winstanley and H. Schomerus and A. Principi",
note = "{\textcopyright} 2021 American Physical Society ",
year = "2021",
month = oct,
day = "15",
doi = "10.1103/PhysRevB.104.165406",
language = "English",
volume = "104",
journal = "Physical review B",
issn = "1098-0121",
publisher = "AMER PHYSICAL SOC",
number = "16",

}

RIS

TY - JOUR

T1 - Corbino field-effect transistors in a magnetic field

T2 - Highly tunable photodetectors

AU - Winstanley, B.

AU - Schomerus, H.

AU - Principi, A.

N1 - © 2021 American Physical Society

PY - 2021/10/15

Y1 - 2021/10/15

N2 - We study gated field-effect transistors (FETs) with an eccentric Corbino-disk geometry, such that the drain spans its circumference while the off-center inner ring acts as a source. An alternating current terahertz potential difference is applied between source and gate while a static source-drain voltage, rectified by the nonlinearities of FET electrons, is measured. When a magnetic field is applied perpendicular to the device, a strong resonance appears at the cyclotron frequency. The strength of the resonance can be tuned by changing the eccentricity of the disk. We show that there is an optimum value of the eccentricity that maximizes the responsivity of the FET.

AB - We study gated field-effect transistors (FETs) with an eccentric Corbino-disk geometry, such that the drain spans its circumference while the off-center inner ring acts as a source. An alternating current terahertz potential difference is applied between source and gate while a static source-drain voltage, rectified by the nonlinearities of FET electrons, is measured. When a magnetic field is applied perpendicular to the device, a strong resonance appears at the cyclotron frequency. The strength of the resonance can be tuned by changing the eccentricity of the disk. We show that there is an optimum value of the eccentricity that maximizes the responsivity of the FET.

U2 - 10.1103/PhysRevB.104.165406

DO - 10.1103/PhysRevB.104.165406

M3 - Journal article

VL - 104

JO - Physical review B

JF - Physical review B

SN - 1098-0121

IS - 16

M1 - 165406

ER -