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Coulomb blockade electrometer based on single Cooper pair tunneling

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Coulomb blockade electrometer based on single Cooper pair tunneling. / Zorin, A.B.; Pashkin, Yu.A.; Krupenin, V.A. et al.
In: Applied Superconductivity, Vol. 6, No. 7, 1998, p. 453-458.

Research output: Contribution to Journal/MagazineJournal articlepeer-review

Harvard

Zorin, AB, Pashkin, YA, Krupenin, VA & Scherer, H 1998, 'Coulomb blockade electrometer based on single Cooper pair tunneling', Applied Superconductivity, vol. 6, no. 7, pp. 453-458. https://doi.org/10.1016/S0964-1807

APA

Zorin, A. B., Pashkin, Y. A., Krupenin, V. A., & Scherer, H. (1998). Coulomb blockade electrometer based on single Cooper pair tunneling. Applied Superconductivity, 6(7), 453-458. https://doi.org/10.1016/S0964-1807

Vancouver

Zorin AB, Pashkin YA, Krupenin VA, Scherer H. Coulomb blockade electrometer based on single Cooper pair tunneling. Applied Superconductivity. 1998;6(7):453-458. doi: 10.1016/S0964-1807

Author

Zorin, A.B. ; Pashkin, Yu.A. ; Krupenin, V.A. et al. / Coulomb blockade electrometer based on single Cooper pair tunneling. In: Applied Superconductivity. 1998 ; Vol. 6, No. 7. pp. 453-458.

Bibtex

@article{2bf2b384765443e2bdbb228dd2b268a9,
title = "Coulomb blockade electrometer based on single Cooper pair tunneling",
abstract = "We have studied the electrometric characteristics of the Bloch transistor, i.e. the structure comprising a double small-capacitance superconductor junction (where both the Josephson and the charging energies, EJ1,2∽EC1,2≫kBT) and an adjacent gate electrode polarizing its island. The transistor bias is realized through small-sized high-ohmic resistors (≫RQ=h/4e2≈6.5 kΩ) to ensure a high electromagnetic impedance of the transistor environment. At low bias current, a coherent flow of single Cooper pairs occurs and the average voltage across the transistor shows a 2e-periodic dependence on the polarization charge Q0. The sensitivity of such an electrometer has been evaluated and found to be comparable to that of the single-electron counterpart. The device has been fabricated with Al/AlOx/Al junctions and two miniature on-chip Cr resistors (each of 80 kΩ and 10μm long) which were located very close to the junctions. We used this device to measure 1/f noise of the background charge and found it to be about 9×10−4e/Hz1/2 at 10Hz.",
author = "A.B. Zorin and Yu.A. Pashkin and V.A. Krupenin and H. Scherer",
year = "1998",
doi = "10.1016/S0964-1807",
language = "English",
volume = "6",
pages = "453--458",
journal = "Applied Superconductivity",
issn = "0964-1807",
publisher = "Pergamon Press Ltd.",
number = "7",

}

RIS

TY - JOUR

T1 - Coulomb blockade electrometer based on single Cooper pair tunneling

AU - Zorin, A.B.

AU - Pashkin, Yu.A.

AU - Krupenin, V.A.

AU - Scherer, H.

PY - 1998

Y1 - 1998

N2 - We have studied the electrometric characteristics of the Bloch transistor, i.e. the structure comprising a double small-capacitance superconductor junction (where both the Josephson and the charging energies, EJ1,2∽EC1,2≫kBT) and an adjacent gate electrode polarizing its island. The transistor bias is realized through small-sized high-ohmic resistors (≫RQ=h/4e2≈6.5 kΩ) to ensure a high electromagnetic impedance of the transistor environment. At low bias current, a coherent flow of single Cooper pairs occurs and the average voltage across the transistor shows a 2e-periodic dependence on the polarization charge Q0. The sensitivity of such an electrometer has been evaluated and found to be comparable to that of the single-electron counterpart. The device has been fabricated with Al/AlOx/Al junctions and two miniature on-chip Cr resistors (each of 80 kΩ and 10μm long) which were located very close to the junctions. We used this device to measure 1/f noise of the background charge and found it to be about 9×10−4e/Hz1/2 at 10Hz.

AB - We have studied the electrometric characteristics of the Bloch transistor, i.e. the structure comprising a double small-capacitance superconductor junction (where both the Josephson and the charging energies, EJ1,2∽EC1,2≫kBT) and an adjacent gate electrode polarizing its island. The transistor bias is realized through small-sized high-ohmic resistors (≫RQ=h/4e2≈6.5 kΩ) to ensure a high electromagnetic impedance of the transistor environment. At low bias current, a coherent flow of single Cooper pairs occurs and the average voltage across the transistor shows a 2e-periodic dependence on the polarization charge Q0. The sensitivity of such an electrometer has been evaluated and found to be comparable to that of the single-electron counterpart. The device has been fabricated with Al/AlOx/Al junctions and two miniature on-chip Cr resistors (each of 80 kΩ and 10μm long) which were located very close to the junctions. We used this device to measure 1/f noise of the background charge and found it to be about 9×10−4e/Hz1/2 at 10Hz.

U2 - 10.1016/S0964-1807

DO - 10.1016/S0964-1807

M3 - Journal article

VL - 6

SP - 453

EP - 458

JO - Applied Superconductivity

JF - Applied Superconductivity

SN - 0964-1807

IS - 7

ER -