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Coulomb Blockade in Resistively Coupled Single-Electron Transistor: Dependence on Bias Conditions

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<mark>Journal publication date</mark>1999
<mark>Journal</mark>Japanese Journal of Applied Physics
Issue numberPart 1, No. 4B
Volume38
Number of pages4
Pages (from-to)2466-2469
Publication StatusPublished
<mark>Original language</mark>English

Abstract

We have measured resistively coupled single electron transistors under two bias conditions: asymmetric and symmetric. We observed a characteristic Coulomb blockade pattern whose shape is significantly different for the two cases. Our simulations based on the orthodox theory of single-electron tunneling are in good qualitative agreement with the experimental data.