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Coulomb Blockade in Resistively Coupled Single-Electron Transistor: Dependence on Bias Conditions

Research output: Contribution to Journal/Magazine › Journal article › peer-review

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Coulomb Blockade in Resistively Coupled Single-Electron Transistor: Dependence on Bias Conditions. / Pashkin, Yuri A.; Nakamura, Yasunobu; Tsai, Jaw-Shen.
In: Japanese Journal of Applied Physics, Vol. 38, No. Part 1, No. 4B, 1999, p. 2466-2469.

Research output: Contribution to Journal/Magazine › Journal article › peer-review

Harvard

Pashkin, YA, Nakamura, Y & Tsai, J-S 1999, 'Coulomb Blockade in Resistively Coupled Single-Electron Transistor: Dependence on Bias Conditions', Japanese Journal of Applied Physics, vol. 38, no. Part 1, No. 4B, pp. 2466-2469. https://doi.org/10.1143/jjap.38.2466

APA

Pashkin, Y. A., Nakamura, Y., & Tsai, J-S. (1999). Coulomb Blockade in Resistively Coupled Single-Electron Transistor: Dependence on Bias Conditions. Japanese Journal of Applied Physics, 38(Part 1, No. 4B), 2466-2469. https://doi.org/10.1143/jjap.38.2466

Vancouver

Pashkin YA, Nakamura Y, Tsai J-S. Coulomb Blockade in Resistively Coupled Single-Electron Transistor: Dependence on Bias Conditions. Japanese Journal of Applied Physics. 1999;38(Part 1, No. 4B):2466-2469. doi: 10.1143/jjap.38.2466

Author

Pashkin, Yuri A. ; Nakamura, Yasunobu ; Tsai, Jaw-Shen. / Coulomb Blockade in Resistively Coupled Single-Electron Transistor: Dependence on Bias Conditions. In: Japanese Journal of Applied Physics. 1999 ; Vol. 38, No. Part 1, No. 4B. pp. 2466-2469.

Bibtex

@article{19a02528f5684f6ba9efdb8dd5c56c38,
title = "Coulomb Blockade in Resistively Coupled Single-Electron Transistor: Dependence on Bias Conditions",
abstract = "We have measured resistively coupled single electron transistors under two bias conditions: asymmetric and symmetric. We observed a characteristic Coulomb blockade pattern whose shape is significantly different for the two cases. Our simulations based on the orthodox theory of single-electron tunneling are in good qualitative agreement with the experimental data.",
author = "Pashkin, {Yuri A.} and Yasunobu Nakamura and Jaw-Shen Tsai",
year = "1999",
doi = "10.1143/jjap.38.2466",
language = "English",
volume = "38",
pages = "2466--2469",
journal = "Japanese Journal of Applied Physics",
issn = "0021-4922",
publisher = "Institute of Physics Publishing",
number = "Part 1, No. 4B",

}

RIS

TY - JOUR

T1 - Coulomb Blockade in Resistively Coupled Single-Electron Transistor: Dependence on Bias Conditions

AU - Pashkin, Yuri A.

AU - Nakamura, Yasunobu

AU - Tsai, Jaw-Shen

PY - 1999

Y1 - 1999

N2 - We have measured resistively coupled single electron transistors under two bias conditions: asymmetric and symmetric. We observed a characteristic Coulomb blockade pattern whose shape is significantly different for the two cases. Our simulations based on the orthodox theory of single-electron tunneling are in good qualitative agreement with the experimental data.

AB - We have measured resistively coupled single electron transistors under two bias conditions: asymmetric and symmetric. We observed a characteristic Coulomb blockade pattern whose shape is significantly different for the two cases. Our simulations based on the orthodox theory of single-electron tunneling are in good qualitative agreement with the experimental data.

U2 - 10.1143/jjap.38.2466

DO - 10.1143/jjap.38.2466

M3 - Journal article

VL - 38

SP - 2466

EP - 2469

JO - Japanese Journal of Applied Physics

JF - Japanese Journal of Applied Physics

SN - 0021-4922

IS - Part 1, No. 4B

ER -