Home > Research > Publications & Outputs > DC bias circuit effects in CV measurements.

Research

Electronic data

Links

View graph of relations

DC bias circuit effects in CV measurements.

Research output: Contribution to conference - Without ISBN/ISSN › Speech

Published
Publication date16/10/2006
Number of pages23
<mark>Original language</mark>English
Event9th RD50 Workshop on Radiation hard semiconductor devices for very high luminosity colliders - CERN, Geneva, Switzerland
Duration: 16/10/2006 → 18/10/2006

Conference

Conference9th RD50 Workshop on Radiation hard semiconductor devices for very high luminosity colliders
CityCERN, Geneva, Switzerland
Period16/10/06 → 18/10/06

Abstract

A DC bias circuit is a necessary part of CV measurement set-up. The effects of this circuit on the measured parameters are simulated and compared with experimental data. Reconstruction of the actual DUT characteristics is considered.