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Detection of mechanical resonance of a single-electron transistor by direct current

Research output: Contribution to journalJournal articlepeer-review

  • Yuri Pashkin
  • T. F. Li
  • J. P. Pekola
  • O. Astafiev
  • D. A. Knyazev
  • F. Hoehne
  • H. Im
  • Y. Nakamura
  • J. S. Tsai
Article number263513
<mark>Journal publication date</mark>28/06/2010
<mark>Journal</mark>Applied Physics Letters
Issue number26
Number of pages3
Pages (from-to)-
Publication StatusPublished
<mark>Original language</mark>English


We have suspended an Al based single-electron transistor (SET) whose island can resonate freely between the source and drain leads forming the clamps. In addition to the regular side gate, a bottom gate with a larger capacitance to the SET island is placed underneath to increase the SET coupling to mechanical motion. The device can be considered as a doubly clamped Al beam that can transduce mechanical vibrations into variations in the SET current. Our simulations based on the orthodox model, with the SET parameters estimated from the experiment, reproduce the observed transport characteristics in detail.