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Detection of mechanical resonance of a single-electron transistor by direct current

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Detection of mechanical resonance of a single-electron transistor by direct current. / Pashkin, Yuri; Li, T. F.; Pekola, J. P. et al.
In: Applied Physics Letters, Vol. 96, No. 26, 263513, 28.06.2010, p. -.

Research output: Contribution to Journal/Magazine › Journal article › peer-review

Harvard

Pashkin, Y, Li, TF, Pekola, JP, Astafiev, O, Knyazev, DA, Hoehne, F, Im, H, Nakamura, Y & Tsai, JS 2010, 'Detection of mechanical resonance of a single-electron transistor by direct current', Applied Physics Letters, vol. 96, no. 26, 263513, pp. -. https://doi.org/10.1063/1.3455880

APA

Pashkin, Y., Li, T. F., Pekola, J. P., Astafiev, O., Knyazev, D. A., Hoehne, F., Im, H., Nakamura, Y., & Tsai, J. S. (2010). Detection of mechanical resonance of a single-electron transistor by direct current. Applied Physics Letters, 96(26), -. Article 263513. https://doi.org/10.1063/1.3455880

Vancouver

Pashkin Y, Li TF, Pekola JP, Astafiev O, Knyazev DA, Hoehne F et al. Detection of mechanical resonance of a single-electron transistor by direct current. Applied Physics Letters. 2010 Jun 28;96(26):-. 263513. doi: 10.1063/1.3455880

Author

Pashkin, Yuri ; Li, T. F. ; Pekola, J. P. et al. / Detection of mechanical resonance of a single-electron transistor by direct current. In: Applied Physics Letters. 2010 ; Vol. 96, No. 26. pp. -.

Bibtex

@article{9fb52ea0943b499bbcea33616fd7d38e,
title = "Detection of mechanical resonance of a single-electron transistor by direct current",
abstract = "We have suspended an Al based single-electron transistor (SET) whose island can resonate freely between the source and drain leads forming the clamps. In addition to the regular side gate, a bottom gate with a larger capacitance to the SET island is placed underneath to increase the SET coupling to mechanical motion. The device can be considered as a doubly clamped Al beam that can transduce mechanical vibrations into variations in the SET current. Our simulations based on the orthodox model, with the SET parameters estimated from the experiment, reproduce the observed transport characteristics in detail. ",
keywords = "aluminium, aluminium compounds , resonance , single electron transistors, vibrations",
author = "Yuri Pashkin and Li, {T. F.} and Pekola, {J. P.} and O. Astafiev and Knyazev, {D. A.} and F. Hoehne and H. Im and Y. Nakamura and Tsai, {J. S.}",
year = "2010",
month = jun,
day = "28",
doi = "10.1063/1.3455880",
language = "English",
volume = "96",
pages = "--",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Inc.",
number = "26",

}

RIS

TY - JOUR

T1 - Detection of mechanical resonance of a single-electron transistor by direct current

AU - Pashkin, Yuri

AU - Li, T. F.

AU - Pekola, J. P.

AU - Astafiev, O.

AU - Knyazev, D. A.

AU - Hoehne, F.

AU - Im, H.

AU - Nakamura, Y.

AU - Tsai, J. S.

PY - 2010/6/28

Y1 - 2010/6/28

N2 - We have suspended an Al based single-electron transistor (SET) whose island can resonate freely between the source and drain leads forming the clamps. In addition to the regular side gate, a bottom gate with a larger capacitance to the SET island is placed underneath to increase the SET coupling to mechanical motion. The device can be considered as a doubly clamped Al beam that can transduce mechanical vibrations into variations in the SET current. Our simulations based on the orthodox model, with the SET parameters estimated from the experiment, reproduce the observed transport characteristics in detail. 

AB - We have suspended an Al based single-electron transistor (SET) whose island can resonate freely between the source and drain leads forming the clamps. In addition to the regular side gate, a bottom gate with a larger capacitance to the SET island is placed underneath to increase the SET coupling to mechanical motion. The device can be considered as a doubly clamped Al beam that can transduce mechanical vibrations into variations in the SET current. Our simulations based on the orthodox model, with the SET parameters estimated from the experiment, reproduce the observed transport characteristics in detail. 

KW - aluminium

KW - aluminium compounds

KW - resonance

KW - single electron transistors

KW - vibrations

U2 - 10.1063/1.3455880

DO - 10.1063/1.3455880

M3 - Journal article

VL - 96

SP - -

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 26

M1 - 263513

ER -