Research output: Contribution in Book/Report/Proceedings - With ISBN/ISSN › Conference contribution/Paper › peer-review
Research output: Contribution in Book/Report/Proceedings - With ISBN/ISSN › Conference contribution/Paper › peer-review
}
TY - GEN
T1 - Development of III-V barrier diode radiation-hard infrared detectors for space applications
AU - Wheeler, R.
AU - Mason, I.
AU - Jerram, P.
AU - Stocken, P.
AU - Jordan, D.
AU - Willis, M.
AU - Carmichael, M.
AU - Craig, A. P.
AU - Golding, T.
AU - Marshall, A. R.J.
PY - 2020
Y1 - 2020
N2 - Opto-electronic devices destined for space must be suitably radiation-hard, meaning that they must be resilient to the effects of high energy radiation in space. For high performance IR (infrared) space-based applications, the current material of choice is MCT (Mercury Cadmium Telluride). MCT is difficult and therefore expensive to fabricate and the constituent materials are becoming increasingly restricted by regulation. The new generation of barrier diode detectors based on III-V materials offer a promising alternative to MCT, providing comparable performance whilst offering devices that are compatible with volume manufacturing processes. As part of a DASA Space-to-Innovate Phase 1 funded project we have developed a novel radiation hard unipolar barrier-based ABaT™ III-V MWIR diode detector. The detector is being subjected to gamma and proton radiation testing to demonstrate its suitability for space environments. To compare the radiation performance of this diode, a number of other typical III-V detector diode structures have been fabricated and tested. In this paper we present the results of the project so far and future plans to develop this into detector arrays.
AB - Opto-electronic devices destined for space must be suitably radiation-hard, meaning that they must be resilient to the effects of high energy radiation in space. For high performance IR (infrared) space-based applications, the current material of choice is MCT (Mercury Cadmium Telluride). MCT is difficult and therefore expensive to fabricate and the constituent materials are becoming increasingly restricted by regulation. The new generation of barrier diode detectors based on III-V materials offer a promising alternative to MCT, providing comparable performance whilst offering devices that are compatible with volume manufacturing processes. As part of a DASA Space-to-Innovate Phase 1 funded project we have developed a novel radiation hard unipolar barrier-based ABaT™ III-V MWIR diode detector. The detector is being subjected to gamma and proton radiation testing to demonstrate its suitability for space environments. To compare the radiation performance of this diode, a number of other typical III-V detector diode structures have been fabricated and tested. In this paper we present the results of the project so far and future plans to develop this into detector arrays.
KW - III-V
KW - Infrared
KW - MWIR
KW - Radiation Hard
KW - Unipolar Barrier Diode
U2 - 10.1117/12.2572933
DO - 10.1117/12.2572933
M3 - Conference contribution/Paper
AN - SCOPUS:85093660056
T3 - Proceedings of SPIE - The International Society for Optical Engineering
BT - Electro-Optical and Infrared Systems
A2 - Hickman, Duncan L.
A2 - Bursing, Helge
PB - SPIE
T2 - Electro-Optical and Infrared Systems: Technology and Applications XVII 2020
Y2 - 21 September 2020 through 25 September 2020
ER -