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Effect of rapid thermal annealing on InGaAs/GaAs quantum wells

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Effect of rapid thermal annealing on InGaAs/GaAs quantum wells. / Zhuang, Qiandong; Li, J. M.; Zeng, Y. P. et al.
In: Journal of Crystal Growth, Vol. 212, No. 1-2, 2000, p. 352-355.

Research output: Contribution to Journal/Magazine › Journal article › peer-review

Harvard

Zhuang, Q, Li, JM, Zeng, YP, Yoon, SF, Zheng, HQ, Kong, MY & Lin, LY 2000, 'Effect of rapid thermal annealing on InGaAs/GaAs quantum wells', Journal of Crystal Growth, vol. 212, no. 1-2, pp. 352-355. https://doi.org/10.1016/S0022-0248(00)00018-X

APA

Zhuang, Q., Li, J. M., Zeng, Y. P., Yoon, S. F., Zheng, H. Q., Kong, M. Y., & Lin, L. Y. (2000). Effect of rapid thermal annealing on InGaAs/GaAs quantum wells. Journal of Crystal Growth, 212(1-2), 352-355. https://doi.org/10.1016/S0022-0248(00)00018-X

Vancouver

Zhuang Q, Li JM, Zeng YP, Yoon SF, Zheng HQ, Kong MY et al. Effect of rapid thermal annealing on InGaAs/GaAs quantum wells. Journal of Crystal Growth. 2000;212(1-2):352-355. doi: 10.1016/S0022-0248(00)00018-X

Author

Zhuang, Qiandong ; Li, J. M. ; Zeng, Y. P. et al. / Effect of rapid thermal annealing on InGaAs/GaAs quantum wells. In: Journal of Crystal Growth. 2000 ; Vol. 212, No. 1-2. pp. 352-355.

Bibtex

@article{0e83fc4fbf104cc7b05b49814d8d9ff0,
title = "Effect of rapid thermal annealing on InGaAs/GaAs quantum wells",
abstract = "We have studied the effect of rapid thermal annealing (RTA) on highly strained InGaAs/GaAs quantum wells by using photoluminescence (PL) and double-crystal X-ray diffraction (DCXRD) measurements. It is found that a distinct additional PL emission peak can be observed for the annealed samples. This PL emission possesses features similar to the PL emission from InGaAs/GaAs quantum dots (QDs) with the same indium content. It is proposed that this emission stems from QDs, which were formed during the annealing process. This formation is attributed to the favorable diffusion due to the inhomogeneous strain distribution in the InGaAs layer intersurface. The DCXRD measurements also confirm that the dominant relaxation is strain enhanced diffusion under the low annealing temperatures.",
keywords = "Annealingnext term, Interdiffusion, previous termQuantumnext term dots, MBE",
author = "Qiandong Zhuang and Li, {J. M.} and Zeng, {Y. P.} and Yoon, {S. F.} and Zheng, {H. Q.} and M.Y. Kong and Lin, {L. Y.}",
year = "2000",
doi = "10.1016/S0022-0248(00)00018-X",
language = "English",
volume = "212",
pages = "352--355",
journal = "Journal of Crystal Growth",
issn = "0022-0248",
publisher = "Elsevier",
number = "1-2",

}

RIS

TY - JOUR

T1 - Effect of rapid thermal annealing on InGaAs/GaAs quantum wells

AU - Zhuang, Qiandong

AU - Li, J. M.

AU - Zeng, Y. P.

AU - Yoon, S. F.

AU - Zheng, H. Q.

AU - Kong, M.Y.

AU - Lin, L. Y.

PY - 2000

Y1 - 2000

N2 - We have studied the effect of rapid thermal annealing (RTA) on highly strained InGaAs/GaAs quantum wells by using photoluminescence (PL) and double-crystal X-ray diffraction (DCXRD) measurements. It is found that a distinct additional PL emission peak can be observed for the annealed samples. This PL emission possesses features similar to the PL emission from InGaAs/GaAs quantum dots (QDs) with the same indium content. It is proposed that this emission stems from QDs, which were formed during the annealing process. This formation is attributed to the favorable diffusion due to the inhomogeneous strain distribution in the InGaAs layer intersurface. The DCXRD measurements also confirm that the dominant relaxation is strain enhanced diffusion under the low annealing temperatures.

AB - We have studied the effect of rapid thermal annealing (RTA) on highly strained InGaAs/GaAs quantum wells by using photoluminescence (PL) and double-crystal X-ray diffraction (DCXRD) measurements. It is found that a distinct additional PL emission peak can be observed for the annealed samples. This PL emission possesses features similar to the PL emission from InGaAs/GaAs quantum dots (QDs) with the same indium content. It is proposed that this emission stems from QDs, which were formed during the annealing process. This formation is attributed to the favorable diffusion due to the inhomogeneous strain distribution in the InGaAs layer intersurface. The DCXRD measurements also confirm that the dominant relaxation is strain enhanced diffusion under the low annealing temperatures.

KW - Annealingnext term

KW - Interdiffusion

KW - previous termQuantumnext term dots

KW - MBE

U2 - 10.1016/S0022-0248(00)00018-X

DO - 10.1016/S0022-0248(00)00018-X

M3 - Journal article

VL - 212

SP - 352

EP - 355

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

SN - 0022-0248

IS - 1-2

ER -