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Electrical transport model of silicene as a channel of field effect transistor

Research output: Contribution to journalJournal articlepeer-review

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  • Hatef Sadeghi
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<mark>Journal publication date</mark>06/2014
<mark>Journal</mark>Journal of Nanoscience and Nanotechnology
Issue number6
Volume14
Number of pages7
Pages (from-to)4178-4184
Publication StatusPublished
<mark>Original language</mark>English

Abstract

The analytical electrical transport model of the Silicene, a single layer of sp(3) bonded silicon atoms in the honeycomb lattice structure as a channel in the field effect transistor configuration is presented in this paper. Although the carrier concentration of the Silicene shows similar behavior to Graphene, there are some differences in the conductance behavior. Presented model shows increment in the total carrier and the conductance with the gate voltage as expected for conventional semiconductors which affected by the temperature only in the neutrality point. The minimum conductance is increased by the temperature whereas it remains stable in the degenerate regime. Presented analytical model is in good agreement with the numerical conductance calculation based on the implementation of the non-equilibrium Green's function method coupled to the density functional theory.