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Electrical transport model of silicene as a channel of field effect transistor

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Electrical transport model of silicene as a channel of field effect transistor. / Sadeghi, Hatef.
In: Journal of Nanoscience and Nanotechnology, Vol. 14, No. 6, 06.2014, p. 4178-4184.

Research output: Contribution to Journal/Magazine › Journal article › peer-review

Harvard

Sadeghi, H 2014, 'Electrical transport model of silicene as a channel of field effect transistor', Journal of Nanoscience and Nanotechnology, vol. 14, no. 6, pp. 4178-4184. https://doi.org/10.1166/jnn.2014.8914

APA

Sadeghi, H. (2014). Electrical transport model of silicene as a channel of field effect transistor. Journal of Nanoscience and Nanotechnology, 14(6), 4178-4184. https://doi.org/10.1166/jnn.2014.8914

Vancouver

Sadeghi H. Electrical transport model of silicene as a channel of field effect transistor. Journal of Nanoscience and Nanotechnology. 2014 Jun;14(6):4178-4184. doi: 10.1166/jnn.2014.8914

Author

Sadeghi, Hatef. / Electrical transport model of silicene as a channel of field effect transistor. In: Journal of Nanoscience and Nanotechnology. 2014 ; Vol. 14, No. 6. pp. 4178-4184.

Bibtex

@article{adc185bf32e3438e9ba6e449181962ae,
title = "Electrical transport model of silicene as a channel of field effect transistor",
abstract = "The analytical electrical transport model of the Silicene, a single layer of sp(3) bonded silicon atoms in the honeycomb lattice structure as a channel in the field effect transistor configuration is presented in this paper. Although the carrier concentration of the Silicene shows similar behavior to Graphene, there are some differences in the conductance behavior. Presented model shows increment in the total carrier and the conductance with the gate voltage as expected for conventional semiconductors which affected by the temperature only in the neutrality point. The minimum conductance is increased by the temperature whereas it remains stable in the degenerate regime. Presented analytical model is in good agreement with the numerical conductance calculation based on the implementation of the non-equilibrium Green's function method coupled to the density functional theory.",
keywords = "Silicene, Electronic Properties, Analytical Model, Carrier Concentration, Conductance, ELECTRONIC-PROPERTIES, 2-DIMENSIONAL SILICENE, GRAPHENE, NANORIBBONS, STRAIN, 1ST-PRINCIPLES, FERROMAGNETISM, GERMANENE",
author = "Hatef Sadeghi",
year = "2014",
month = jun,
doi = "10.1166/jnn.2014.8914",
language = "English",
volume = "14",
pages = "4178--4184",
journal = "Journal of Nanoscience and Nanotechnology",
issn = "1533-4880",
publisher = "American Scientific Publishers",
number = "6",

}

RIS

TY - JOUR

T1 - Electrical transport model of silicene as a channel of field effect transistor

AU - Sadeghi, Hatef

PY - 2014/6

Y1 - 2014/6

N2 - The analytical electrical transport model of the Silicene, a single layer of sp(3) bonded silicon atoms in the honeycomb lattice structure as a channel in the field effect transistor configuration is presented in this paper. Although the carrier concentration of the Silicene shows similar behavior to Graphene, there are some differences in the conductance behavior. Presented model shows increment in the total carrier and the conductance with the gate voltage as expected for conventional semiconductors which affected by the temperature only in the neutrality point. The minimum conductance is increased by the temperature whereas it remains stable in the degenerate regime. Presented analytical model is in good agreement with the numerical conductance calculation based on the implementation of the non-equilibrium Green's function method coupled to the density functional theory.

AB - The analytical electrical transport model of the Silicene, a single layer of sp(3) bonded silicon atoms in the honeycomb lattice structure as a channel in the field effect transistor configuration is presented in this paper. Although the carrier concentration of the Silicene shows similar behavior to Graphene, there are some differences in the conductance behavior. Presented model shows increment in the total carrier and the conductance with the gate voltage as expected for conventional semiconductors which affected by the temperature only in the neutrality point. The minimum conductance is increased by the temperature whereas it remains stable in the degenerate regime. Presented analytical model is in good agreement with the numerical conductance calculation based on the implementation of the non-equilibrium Green's function method coupled to the density functional theory.

KW - Silicene

KW - Electronic Properties

KW - Analytical Model

KW - Carrier Concentration

KW - Conductance

KW - ELECTRONIC-PROPERTIES

KW - 2-DIMENSIONAL SILICENE

KW - GRAPHENE

KW - NANORIBBONS

KW - STRAIN

KW - 1ST-PRINCIPLES

KW - FERROMAGNETISM

KW - GERMANENE

U2 - 10.1166/jnn.2014.8914

DO - 10.1166/jnn.2014.8914

M3 - Journal article

VL - 14

SP - 4178

EP - 4184

JO - Journal of Nanoscience and Nanotechnology

JF - Journal of Nanoscience and Nanotechnology

SN - 1533-4880

IS - 6

ER -