Research output: Contribution to Journal/Magazine › Journal article › peer-review
Research output: Contribution to Journal/Magazine › Journal article › peer-review
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TY - JOUR
T1 - Electron dominated impact ionization and avalanche gain characteristics in InAs photodiodes
AU - Marshall, A. R. J.
AU - Tan, C. H.
AU - Steer, M. J.
AU - David, J. P. R.
PY - 2008/9/15
Y1 - 2008/9/15
N2 - An experimental investigation into impact ionization in InAs photodiodes is presented. Photomultiplication measurements on p-i-n and n-i-p diodes show that while high avalanche gains can be obtained for electron initiated multiplication, there is virtually no gain with hole initiated multiplication. This indicates that the electron ionization coefficient is significantly greater than the hole ionization coefficient raising the possibility of extremely low noise InAs avalanche photodiodes when gain is initiated by electrons. The onset of electron initiated impact ionization was detectable at electric fields below 10 kV cm(-1) with useful gain observed at biases below 10 V. (C) 2008 American Institute of Physics.
AB - An experimental investigation into impact ionization in InAs photodiodes is presented. Photomultiplication measurements on p-i-n and n-i-p diodes show that while high avalanche gains can be obtained for electron initiated multiplication, there is virtually no gain with hole initiated multiplication. This indicates that the electron ionization coefficient is significantly greater than the hole ionization coefficient raising the possibility of extremely low noise InAs avalanche photodiodes when gain is initiated by electrons. The onset of electron initiated impact ionization was detectable at electric fields below 10 kV cm(-1) with useful gain observed at biases below 10 V. (C) 2008 American Institute of Physics.
KW - avalanche photodiodes
KW - electron impact ionisation
KW - III-V semiconductors
KW - indium compounds
KW - p-i-n photodiodes
KW - semiconductor diodes
U2 - 10.1063/1.2980451
DO - 10.1063/1.2980451
M3 - Journal article
VL - 93
SP - -
JO - Applied Physics Letters
JF - Applied Physics Letters
SN - 0003-6951
IS - 11
M1 - 111107
ER -