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Electronic transport in normal-conductor/graphene/normal-conductor junctions and conditions for insulating behavior at a finite charge-carrier density .

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Electronic transport in normal-conductor/graphene/normal-conductor junctions and conditions for insulating behavior at a finite charge-carrier density . / Robinson, John P.; Schomerus, Henning.
In: Physical review B, Vol. 76, 2007, p. 115430.

Research output: Contribution to Journal/Magazine › Journal article › peer-review

Harvard

Robinson, JP & Schomerus, H 2007, 'Electronic transport in normal-conductor/graphene/normal-conductor junctions and conditions for insulating behavior at a finite charge-carrier density .', Physical review B, vol. 76, pp. 115430. https://doi.org/10.1103/PhysRevB.76.115430

APA

Robinson, J. P., & Schomerus, H. (2007). Electronic transport in normal-conductor/graphene/normal-conductor junctions and conditions for insulating behavior at a finite charge-carrier density . Physical review B, 76, 115430. https://doi.org/10.1103/PhysRevB.76.115430

Vancouver

Robinson JP, Schomerus H. Electronic transport in normal-conductor/graphene/normal-conductor junctions and conditions for insulating behavior at a finite charge-carrier density . Physical review B. 2007;76:115430. doi: 10.1103/PhysRevB.76.115430

Author

Robinson, John P. ; Schomerus, Henning. / Electronic transport in normal-conductor/graphene/normal-conductor junctions and conditions for insulating behavior at a finite charge-carrier density . In: Physical review B. 2007 ; Vol. 76. pp. 115430.

Bibtex

@article{5f5dd0a01d694347bad198edb9104ad6,
title = "Electronic transport in normal-conductor/graphene/normal-conductor junctions and conditions for insulating behavior at a finite charge-carrier density .",
abstract = "We investigate the conductance of normal-conductor/graphene/normal-conductor (NGN) junctions for arbitrary on-site potentials in the normal and graphitic parts of the system. We find that a ballistic NGN junction can display insulating behavior even when the charge-carrier density in the graphene part is finite. This effect originates in the different k intervals supporting propagating modes in graphene and a normal conductor, and persists for moderate levels of bulk, edge, or interface disorder. The ensuing conductance thresholds could be used as an electronic tool to map out details of the graphene band structure in absolute k space.",
author = "Robinson, {John P.} and Henning Schomerus",
year = "2007",
doi = "10.1103/PhysRevB.76.115430",
language = "English",
volume = "76",
pages = "115430",
journal = "Physical review B",
issn = "1550-235X",
publisher = "AMER PHYSICAL SOC",

}

RIS

TY - JOUR

T1 - Electronic transport in normal-conductor/graphene/normal-conductor junctions and conditions for insulating behavior at a finite charge-carrier density .

AU - Robinson, John P.

AU - Schomerus, Henning

PY - 2007

Y1 - 2007

N2 - We investigate the conductance of normal-conductor/graphene/normal-conductor (NGN) junctions for arbitrary on-site potentials in the normal and graphitic parts of the system. We find that a ballistic NGN junction can display insulating behavior even when the charge-carrier density in the graphene part is finite. This effect originates in the different k intervals supporting propagating modes in graphene and a normal conductor, and persists for moderate levels of bulk, edge, or interface disorder. The ensuing conductance thresholds could be used as an electronic tool to map out details of the graphene band structure in absolute k space.

AB - We investigate the conductance of normal-conductor/graphene/normal-conductor (NGN) junctions for arbitrary on-site potentials in the normal and graphitic parts of the system. We find that a ballistic NGN junction can display insulating behavior even when the charge-carrier density in the graphene part is finite. This effect originates in the different k intervals supporting propagating modes in graphene and a normal conductor, and persists for moderate levels of bulk, edge, or interface disorder. The ensuing conductance thresholds could be used as an electronic tool to map out details of the graphene band structure in absolute k space.

U2 - 10.1103/PhysRevB.76.115430

DO - 10.1103/PhysRevB.76.115430

M3 - Journal article

VL - 76

SP - 115430

JO - Physical review B

JF - Physical review B

SN - 1550-235X

ER -