Research output: Contribution to Journal/Magazine › Journal article › peer-review
<mark>Journal publication date</mark> | 08/2011 |
---|---|
<mark>Journal</mark> | Solid State Communications |
Issue number | 16 |
Volume | 151 |
Number of pages | 6 |
Pages (from-to) | 1094-1099 |
Publication Status | Published |
<mark>Original language</mark> | English |
Here we review the concepts and technologies, in particular photochemical gating, which contributed to the recent progress in quantum Hall resistance metrology based on large scale epitaxial graphene on silicon carbide.