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Engineering and metrology of epitaxial graphene. / Tzalenchuk, Alexander; Lara-Avila, Samuel; Cedergren, Karin et al.
In:
Solid State Communications, Vol. 151, No. 16, 08.2011, p. 1094-1099.
Research output: Contribution to Journal/Magazine › Journal article › peer-review
Harvard
Tzalenchuk, A, Lara-Avila, S, Cedergren, K, Syvajarvi, M, Yakimova, R, Kazakova, O, Janssen, TJBM, Moth-Poulsen, K, Bjornholm, T, Kopylov, S
, Falko, V & Kubatkin, S 2011, '
Engineering and metrology of epitaxial graphene',
Solid State Communications, vol. 151, no. 16, pp. 1094-1099.
https://doi.org/10.1016/j.ssc.2011.05.020APA
Tzalenchuk, A., Lara-Avila, S., Cedergren, K., Syvajarvi, M., Yakimova, R., Kazakova, O., Janssen, T. J. B. M., Moth-Poulsen, K., Bjornholm, T., Kopylov, S.
, Falko, V., & Kubatkin, S. (2011).
Engineering and metrology of epitaxial graphene.
Solid State Communications,
151(16), 1094-1099.
https://doi.org/10.1016/j.ssc.2011.05.020Vancouver
Author
Bibtex
@article{c8a70f9918024fb89a7e880613d5aad2,
title = "Engineering and metrology of epitaxial graphene",
abstract = "Here we review the concepts and technologies, in particular photochemical gating, which contributed to the recent progress in quantum Hall resistance metrology based on large scale epitaxial graphene on silicon carbide. ",
keywords = "A. Graphene, D. Quantum Hall effect , D. Photochemical gate , E. Metrology",
author = "Alexander Tzalenchuk and Samuel Lara-Avila and Karin Cedergren and Mikael Syvajarvi and Rositza Yakimova and Olga Kazakova and Janssen, {T. J. B. M.} and Kasper Moth-Poulsen and Thomas Bjornholm and Sergey Kopylov and Vladimir Falko and Sergey Kubatkin",
year = "2011",
month = aug,
doi = "10.1016/j.ssc.2011.05.020",
language = "English",
volume = "151",
pages = "1094--1099",
journal = "Solid State Communications",
issn = "0038-1098",
publisher = "Elsevier Limited",
number = "16",
}
RIS
TY - JOUR
T1 - Engineering and metrology of epitaxial graphene
AU - Tzalenchuk, Alexander
AU - Lara-Avila, Samuel
AU - Cedergren, Karin
AU - Syvajarvi, Mikael
AU - Yakimova, Rositza
AU - Kazakova, Olga
AU - Janssen, T. J. B. M.
AU - Moth-Poulsen, Kasper
AU - Bjornholm, Thomas
AU - Kopylov, Sergey
AU - Falko, Vladimir
AU - Kubatkin, Sergey
PY - 2011/8
Y1 - 2011/8
N2 - Here we review the concepts and technologies, in particular photochemical gating, which contributed to the recent progress in quantum Hall resistance metrology based on large scale epitaxial graphene on silicon carbide.
AB - Here we review the concepts and technologies, in particular photochemical gating, which contributed to the recent progress in quantum Hall resistance metrology based on large scale epitaxial graphene on silicon carbide.
KW - A. Graphene
KW - D. Quantum Hall effect
KW - D. Photochemical gate
KW - E. Metrology
U2 - 10.1016/j.ssc.2011.05.020
DO - 10.1016/j.ssc.2011.05.020
M3 - Journal article
VL - 151
SP - 1094
EP - 1099
JO - Solid State Communications
JF - Solid State Communications
SN - 0038-1098
IS - 16
ER -
