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Enhanced band edge luminescence from stress and defect free GaN nanowall network morphology

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Enhanced band edge luminescence from stress and defect free GaN nanowall network morphology. / Thakur, Varun; Kesaria, Manoj; Shivaprasad, S. M.

In: Solid State Communications, Vol. 171, 10.2013, p. 8-13.

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Thakur, Varun ; Kesaria, Manoj ; Shivaprasad, S. M. / Enhanced band edge luminescence from stress and defect free GaN nanowall network morphology. In: Solid State Communications. 2013 ; Vol. 171. pp. 8-13.

Bibtex

@article{1b3fc2694d2d4226bffa2f05777ac435,
title = "Enhanced band edge luminescence from stress and defect free GaN nanowall network morphology",
abstract = "We report on very high brightness of high quality, dislocation free GaN nanowall network. The GaN nanowall network sample was grown by plasma assisted molecular beam epitaxy and the optical properties were investigated by photoluminescence (PL) and absorption spectroscopy. Other nanostructures and flat structures were grown for comparison and a standard epilayer was used as a reference sample. The PL intensity of the nanowall network structure was observed to be a hundred times more than nanostructures consisting of tubes, as well as flat films. To explain the broadness and the peak position values, strain was calculated by X-ray diffraction studies and a band diagram was proposed to elucidate the structure of these films using PL, absorption and XPS valence band values.",
author = "Varun Thakur and Manoj Kesaria and Shivaprasad, {S. M.}",
year = "2013",
month = oct,
doi = "10.1016/j.ssc.2013.07.012",
language = "English",
volume = "171",
pages = "8--13",
journal = "Solid State Communications",
issn = "0038-1098",
publisher = "Elsevier Limited",

}

RIS

TY - JOUR

T1 - Enhanced band edge luminescence from stress and defect free GaN nanowall network morphology

AU - Thakur, Varun

AU - Kesaria, Manoj

AU - Shivaprasad, S. M.

PY - 2013/10

Y1 - 2013/10

N2 - We report on very high brightness of high quality, dislocation free GaN nanowall network. The GaN nanowall network sample was grown by plasma assisted molecular beam epitaxy and the optical properties were investigated by photoluminescence (PL) and absorption spectroscopy. Other nanostructures and flat structures were grown for comparison and a standard epilayer was used as a reference sample. The PL intensity of the nanowall network structure was observed to be a hundred times more than nanostructures consisting of tubes, as well as flat films. To explain the broadness and the peak position values, strain was calculated by X-ray diffraction studies and a band diagram was proposed to elucidate the structure of these films using PL, absorption and XPS valence band values.

AB - We report on very high brightness of high quality, dislocation free GaN nanowall network. The GaN nanowall network sample was grown by plasma assisted molecular beam epitaxy and the optical properties were investigated by photoluminescence (PL) and absorption spectroscopy. Other nanostructures and flat structures were grown for comparison and a standard epilayer was used as a reference sample. The PL intensity of the nanowall network structure was observed to be a hundred times more than nanostructures consisting of tubes, as well as flat films. To explain the broadness and the peak position values, strain was calculated by X-ray diffraction studies and a band diagram was proposed to elucidate the structure of these films using PL, absorption and XPS valence band values.

U2 - 10.1016/j.ssc.2013.07.012

DO - 10.1016/j.ssc.2013.07.012

M3 - Journal article

VL - 171

SP - 8

EP - 13

JO - Solid State Communications

JF - Solid State Communications

SN - 0038-1098

ER -