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Enhanced infrared photo-response from GaSb/GaAs quantum ring solar cells

Research output: Contribution to Journal/MagazineJournal articlepeer-review

Article number231101
<mark>Journal publication date</mark>3/12/2012
<mark>Journal</mark>Applied Physics Letters
Issue number23
Number of pages5
Publication StatusPublished
<mark>Original language</mark>English


GaAs-based solar cells containing stacked layers of nanostructured type II GaSb quantum ring solar cells are reported which show significantly enhanced infrared photo-response extending out to 1400 nm. The ring formation reduces the net strain energy associated with the large lattice mismatch making it possible to stack multi-layers without the need for strain balancing. The (1 sun) short-circuit current for a 10 layer sample is enhanced by similar to 6% compared to a GaAs control cell. The corresponding open-circuit voltage of 0.6 V is close to the theoretical maximum expected from such structures. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4768942]