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Evaluation of possible equivalent circuits for the description of the CV characteristics of heavily irradiated Si diodes.

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<mark>Journal publication date</mark>10/2005
<mark>Journal</mark>Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
Issue number1-2
Volume552
Number of pages6
Pages (from-to)152-157
Publication StatusPublished
<mark>Original language</mark>English

Abstract

Different equivalent circuit diagrams are evaluated for the representation of the CV characteristics, measured with standard equipment, for a typical Si diode after heavy irradiation. A general approach is developed and several minimal models are analysed. A possible mechanism is proposed for the frequency dependence of the depletion voltage extracted from the CV measurements.