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Evaluation of possible equivalent circuits for the description of the CV characteristics of heavily irradiated Si diodes.

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Evaluation of possible equivalent circuits for the description of the CV characteristics of heavily irradiated Si diodes. / Campbell, Duncan; Chilingarov, Alexandre; Sloan, Terry.
In: Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, Vol. 552, No. 1-2, 10.2005, p. 152-157.

Research output: Contribution to Journal/Magazine › Journal article › peer-review

Harvard

Campbell, D, Chilingarov, A & Sloan, T 2005, 'Evaluation of possible equivalent circuits for the description of the CV characteristics of heavily irradiated Si diodes.', Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, vol. 552, no. 1-2, pp. 152-157. https://doi.org/10.1016/j.nima.2005.06.024

APA

Campbell, D., Chilingarov, A., & Sloan, T. (2005). Evaluation of possible equivalent circuits for the description of the CV characteristics of heavily irradiated Si diodes. Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 552(1-2), 152-157. https://doi.org/10.1016/j.nima.2005.06.024

Vancouver

Campbell D, Chilingarov A, Sloan T. Evaluation of possible equivalent circuits for the description of the CV characteristics of heavily irradiated Si diodes. Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. 2005 Oct;552(1-2):152-157. doi: 10.1016/j.nima.2005.06.024

Author

Campbell, Duncan ; Chilingarov, Alexandre ; Sloan, Terry. / Evaluation of possible equivalent circuits for the description of the CV characteristics of heavily irradiated Si diodes. In: Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. 2005 ; Vol. 552, No. 1-2. pp. 152-157.

Bibtex

@article{ed00227bdca0400ab8e5fe2601e585c5,
title = "Evaluation of possible equivalent circuits for the description of the CV characteristics of heavily irradiated Si diodes.",
abstract = "Different equivalent circuit diagrams are evaluated for the representation of the CV characteristics, measured with standard equipment, for a typical Si diode after heavy irradiation. A general approach is developed and several minimal models are analysed. A possible mechanism is proposed for the frequency dependence of the depletion voltage extracted from the CV measurements.",
keywords = "Irradiated silicon detectors, CV characteristics, Depletion voltage, Frequency dependence",
author = "Duncan Campbell and Alexandre Chilingarov and Terry Sloan",
year = "2005",
month = oct,
doi = "10.1016/j.nima.2005.06.024",
language = "English",
volume = "552",
pages = "152--157",
journal = "Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment",
issn = "0168-9002",
publisher = "ELSEVIER SCIENCE BV",
number = "1-2",

}

RIS

TY - JOUR

T1 - Evaluation of possible equivalent circuits for the description of the CV characteristics of heavily irradiated Si diodes.

AU - Campbell, Duncan

AU - Chilingarov, Alexandre

AU - Sloan, Terry

PY - 2005/10

Y1 - 2005/10

N2 - Different equivalent circuit diagrams are evaluated for the representation of the CV characteristics, measured with standard equipment, for a typical Si diode after heavy irradiation. A general approach is developed and several minimal models are analysed. A possible mechanism is proposed for the frequency dependence of the depletion voltage extracted from the CV measurements.

AB - Different equivalent circuit diagrams are evaluated for the representation of the CV characteristics, measured with standard equipment, for a typical Si diode after heavy irradiation. A general approach is developed and several minimal models are analysed. A possible mechanism is proposed for the frequency dependence of the depletion voltage extracted from the CV measurements.

KW - Irradiated silicon detectors

KW - CV characteristics

KW - Depletion voltage

KW - Frequency dependence

U2 - 10.1016/j.nima.2005.06.024

DO - 10.1016/j.nima.2005.06.024

M3 - Journal article

VL - 552

SP - 152

EP - 157

JO - Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

JF - Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

SN - 0168-9002

IS - 1-2

ER -