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  • PhysRevLett.110.177206

    Rights statement: © 2013 American Physical Society

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Evidence for the role of normal-state electrons in nanoelectromechanical damping mechanisms at very low temperatures

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Evidence for the role of normal-state electrons in nanoelectromechanical damping mechanisms at very low temperatures. / Lulla, K. J.; Defoort, M.; Blanc, C. et al.
In: Physical review letters, Vol. 110, No. 17, 177206, 25.04.2013.

Research output: Contribution to Journal/Magazine › Journal article › peer-review

Harvard

Lulla, KJ, Defoort, M, Blanc, C, Bourgeois, O & Collin, E 2013, 'Evidence for the role of normal-state electrons in nanoelectromechanical damping mechanisms at very low temperatures', Physical review letters, vol. 110, no. 17, 177206. https://doi.org/10.1103/PhysRevLett.110.177206

APA

Lulla, K. J., Defoort, M., Blanc, C., Bourgeois, O., & Collin, E. (2013). Evidence for the role of normal-state electrons in nanoelectromechanical damping mechanisms at very low temperatures. Physical review letters, 110(17), Article 177206. https://doi.org/10.1103/PhysRevLett.110.177206

Vancouver

Lulla KJ, Defoort M, Blanc C, Bourgeois O, Collin E. Evidence for the role of normal-state electrons in nanoelectromechanical damping mechanisms at very low temperatures. Physical review letters. 2013 Apr 25;110(17):177206. doi: 10.1103/PhysRevLett.110.177206

Author

Lulla, K. J. ; Defoort, M. ; Blanc, C. et al. / Evidence for the role of normal-state electrons in nanoelectromechanical damping mechanisms at very low temperatures. In: Physical review letters. 2013 ; Vol. 110, No. 17.

Bibtex

@article{56db08fe4571493ea0ca0d5520a78c40,
title = "Evidence for the role of normal-state electrons in nanoelectromechanical damping mechanisms at very low temperatures",
abstract = "We report on experiments performed at low temperatures on aluminum covered silicon nanoelectromechanical resonators. The substantial difference observed between the mechanical dissipation in the normal and superconducting states measured within the same device unambiguously demonstrates the importance of normal-state electrons in the damping mechanism. The dissipative component becomes vanishingly small at very low temperatures in the superconducting state, leading to exceptional values for the quality factor of such small silicon structures. A critical discussion is given within the framework of the standard tunneling model.",
keywords = "cond-mat.mes-hall",
author = "Lulla, {K. J.} and M. Defoort and C. Blanc and O. Bourgeois and E. Collin",
note = "{\textcopyright} 2013 American Physical Society",
year = "2013",
month = apr,
day = "25",
doi = "10.1103/PhysRevLett.110.177206",
language = "English",
volume = "110",
journal = "Physical review letters",
issn = "1079-7114",
publisher = "American Physical Society",
number = "17",

}

RIS

TY - JOUR

T1 - Evidence for the role of normal-state electrons in nanoelectromechanical damping mechanisms at very low temperatures

AU - Lulla, K. J.

AU - Defoort, M.

AU - Blanc, C.

AU - Bourgeois, O.

AU - Collin, E.

N1 - © 2013 American Physical Society

PY - 2013/4/25

Y1 - 2013/4/25

N2 - We report on experiments performed at low temperatures on aluminum covered silicon nanoelectromechanical resonators. The substantial difference observed between the mechanical dissipation in the normal and superconducting states measured within the same device unambiguously demonstrates the importance of normal-state electrons in the damping mechanism. The dissipative component becomes vanishingly small at very low temperatures in the superconducting state, leading to exceptional values for the quality factor of such small silicon structures. A critical discussion is given within the framework of the standard tunneling model.

AB - We report on experiments performed at low temperatures on aluminum covered silicon nanoelectromechanical resonators. The substantial difference observed between the mechanical dissipation in the normal and superconducting states measured within the same device unambiguously demonstrates the importance of normal-state electrons in the damping mechanism. The dissipative component becomes vanishingly small at very low temperatures in the superconducting state, leading to exceptional values for the quality factor of such small silicon structures. A critical discussion is given within the framework of the standard tunneling model.

KW - cond-mat.mes-hall

U2 - 10.1103/PhysRevLett.110.177206

DO - 10.1103/PhysRevLett.110.177206

M3 - Journal article

VL - 110

JO - Physical review letters

JF - Physical review letters

SN - 1079-7114

IS - 17

M1 - 177206

ER -