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Extended short-wave infrared linear and Geiger mode avalanche photodiodes, based on 6.1 angstrom materials

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Extended short-wave infrared linear and Geiger mode avalanche photodiodes, based on 6.1 angstrom materials. / Craig, A.P.; Jain, M.; Meriggi, L.; Cann, T.; Niblett, A.; Collins, X.; Marshall, A.R.J.

In: Applied Physics Letters, Vol. 114, No. 5, 053501, 04.02.2019.

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@article{d183d74d33aa4f349b652932d481016a,
title = "Extended short-wave infrared linear and Geiger mode avalanche photodiodes, based on 6.1 angstrom materials",
abstract = "Extended short-wave infrared (SWIR) avalanche photodiodes based on III-V quaternary alloys were grown on GaSb. An InGaAsSb absorber allowed for cut-off wavelengths of 2.2 mu m and 2.75 mu m, at 77 K and 300 K, respectively. A multiplication layer of AlGaAsSb with Al = 0.9 mole fraction was used, a material recently characterized by our group, allowing for a breakdown voltage of less than 15 V. Linear and 2D arrays were fabricated using BCl3 dry and HF wet-chemical etching, and dielectric passivation layers were tested. These results indicate that extended SWIR single photon detectors can be developed. (C) 2019 Author(s).",
keywords = "Arsenic compounds, Avalanche photodiodes, Chlorine compounds, Gallium alloys, Gallium compounds, III-V semiconductors, Indium alloys, Particle beams, Passivation, Photodiodes, Photons, Semiconductor alloys, Wet etching, 2D arrays, Cutoff wavelengths, Dielectric passivation, Geiger mode avalanche photodiode, Iii-v quaternary alloys, Mole fraction, Short wave infrared, Single-photon detectors, Infrared radiation",
author = "A.P. Craig and M. Jain and L. Meriggi and T. Cann and A. Niblett and X. Collins and A.R.J. Marshall",
year = "2019",
month = feb,
day = "4",
doi = "10.1063/1.5054753",
language = "English",
volume = "114",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Inc.",
number = "5",

}

RIS

TY - JOUR

T1 - Extended short-wave infrared linear and Geiger mode avalanche photodiodes, based on 6.1 angstrom materials

AU - Craig, A.P.

AU - Jain, M.

AU - Meriggi, L.

AU - Cann, T.

AU - Niblett, A.

AU - Collins, X.

AU - Marshall, A.R.J.

PY - 2019/2/4

Y1 - 2019/2/4

N2 - Extended short-wave infrared (SWIR) avalanche photodiodes based on III-V quaternary alloys were grown on GaSb. An InGaAsSb absorber allowed for cut-off wavelengths of 2.2 mu m and 2.75 mu m, at 77 K and 300 K, respectively. A multiplication layer of AlGaAsSb with Al = 0.9 mole fraction was used, a material recently characterized by our group, allowing for a breakdown voltage of less than 15 V. Linear and 2D arrays were fabricated using BCl3 dry and HF wet-chemical etching, and dielectric passivation layers were tested. These results indicate that extended SWIR single photon detectors can be developed. (C) 2019 Author(s).

AB - Extended short-wave infrared (SWIR) avalanche photodiodes based on III-V quaternary alloys were grown on GaSb. An InGaAsSb absorber allowed for cut-off wavelengths of 2.2 mu m and 2.75 mu m, at 77 K and 300 K, respectively. A multiplication layer of AlGaAsSb with Al = 0.9 mole fraction was used, a material recently characterized by our group, allowing for a breakdown voltage of less than 15 V. Linear and 2D arrays were fabricated using BCl3 dry and HF wet-chemical etching, and dielectric passivation layers were tested. These results indicate that extended SWIR single photon detectors can be developed. (C) 2019 Author(s).

KW - Arsenic compounds

KW - Avalanche photodiodes

KW - Chlorine compounds

KW - Gallium alloys

KW - Gallium compounds

KW - III-V semiconductors

KW - Indium alloys

KW - Particle beams

KW - Passivation

KW - Photodiodes

KW - Photons

KW - Semiconductor alloys

KW - Wet etching

KW - 2D arrays

KW - Cutoff wavelengths

KW - Dielectric passivation

KW - Geiger mode avalanche photodiode

KW - Iii-v quaternary alloys

KW - Mole fraction

KW - Short wave infrared

KW - Single-photon detectors

KW - Infrared radiation

U2 - 10.1063/1.5054753

DO - 10.1063/1.5054753

M3 - Journal article

VL - 114

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 5

M1 - 053501

ER -