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Fabrication and characterization of chromium based single-electron transistors with evaporated chromium oxide barrier tunnel junctions

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Article number1413
<mark>Journal publication date</mark>07/1999
<mark>Journal</mark>Journal of Vacuum Science and Technology B
Issue number4
Publication StatusPublished
<mark>Original language</mark>English


We fabricated chromium based single-electron transistors comprising small-area Cr/CrOx/CrCr/CrOx/Cr tunnel junctions with an evaporated chromium oxide barrier. The transistors are fabricated using e-beam lithography with a bilayer resist and two-angle shadow evaporation. We describe the fabrication process and discuss the device characteristics.