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Fabrication and characterization of chromium based single-electron transistors with evaporated chromium oxide barrier tunnel junctions

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Fabrication and characterization of chromium based single-electron transistors with evaporated chromium oxide barrier tunnel junctions. / Pashkin, Yuri; Pekola, Jukka P.
In: Journal of Vacuum Science and Technology B, Vol. 17, No. 4, 1413, 07.1999.

Research output: Contribution to Journal/Magazine › Journal article › peer-review

Harvard

Pashkin, Y & Pekola, JP 1999, 'Fabrication and characterization of chromium based single-electron transistors with evaporated chromium oxide barrier tunnel junctions', Journal of Vacuum Science and Technology B, vol. 17, no. 4, 1413. https://doi.org/10.1116/1.590769

APA

Pashkin, Y., & Pekola, J. P. (1999). Fabrication and characterization of chromium based single-electron transistors with evaporated chromium oxide barrier tunnel junctions. Journal of Vacuum Science and Technology B, 17(4), Article 1413. https://doi.org/10.1116/1.590769

Vancouver

Pashkin Y, Pekola JP. Fabrication and characterization of chromium based single-electron transistors with evaporated chromium oxide barrier tunnel junctions. Journal of Vacuum Science and Technology B. 1999 Jul;17(4):1413. doi: 10.1116/1.590769

Author

Pashkin, Yuri ; Pekola, Jukka P. / Fabrication and characterization of chromium based single-electron transistors with evaporated chromium oxide barrier tunnel junctions. In: Journal of Vacuum Science and Technology B. 1999 ; Vol. 17, No. 4.

Bibtex

@article{982c0063fe8f4fb8981d6926fc62c541,
title = "Fabrication and characterization of chromium based single-electron transistors with evaporated chromium oxide barrier tunnel junctions",
abstract = "We fabricated chromium based single-electron transistors comprising small-area Cr/CrOx/CrCr/CrOx/Cr tunnel junctions with an evaporated chromium oxide barrier. The transistors are fabricated using e-beam lithography with a bilayer resist and two-angle shadow evaporation. We describe the fabrication process and discuss the device characteristics.",
author = "Yuri Pashkin and Pekola, {Jukka P.}",
year = "1999",
month = jul,
doi = "10.1116/1.590769",
language = "English",
volume = "17",
journal = "Journal of Vacuum Science and Technology B",
issn = "1071-1023",
publisher = "AVS Science and Technology Society",
number = "4",

}

RIS

TY - JOUR

T1 - Fabrication and characterization of chromium based single-electron transistors with evaporated chromium oxide barrier tunnel junctions

AU - Pashkin, Yuri

AU - Pekola, Jukka P.

PY - 1999/7

Y1 - 1999/7

N2 - We fabricated chromium based single-electron transistors comprising small-area Cr/CrOx/CrCr/CrOx/Cr tunnel junctions with an evaporated chromium oxide barrier. The transistors are fabricated using e-beam lithography with a bilayer resist and two-angle shadow evaporation. We describe the fabrication process and discuss the device characteristics.

AB - We fabricated chromium based single-electron transistors comprising small-area Cr/CrOx/CrCr/CrOx/Cr tunnel junctions with an evaporated chromium oxide barrier. The transistors are fabricated using e-beam lithography with a bilayer resist and two-angle shadow evaporation. We describe the fabrication process and discuss the device characteristics.

U2 - 10.1116/1.590769

DO - 10.1116/1.590769

M3 - Journal article

VL - 17

JO - Journal of Vacuum Science and Technology B

JF - Journal of Vacuum Science and Technology B

SN - 1071-1023

IS - 4

M1 - 1413

ER -