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  • PhysRevB 81 235422

    Rights statement: © 2010 The American Physical Society

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Fast and slow edges in bilayer graphene nanoribbons: tuning the transition from band to Mott insulator

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Fast and slow edges in bilayer graphene nanoribbons: tuning the transition from band to Mott insulator. / Cortijo Fernandez, Alberto; Oroszlany, Laszlo; Schomerus, Henning.
In: Physical review B, Vol. 81, No. 23, 235422 , 16.06.2010.

Research output: Contribution to Journal/Magazine › Journal article › peer-review

Harvard

Cortijo Fernandez, A, Oroszlany, L & Schomerus, H 2010, 'Fast and slow edges in bilayer graphene nanoribbons: tuning the transition from band to Mott insulator', Physical review B, vol. 81, no. 23, 235422 . https://doi.org/10.1103/PhysRevB.81.235422

APA

Cortijo Fernandez, A., Oroszlany, L., & Schomerus, H. (2010). Fast and slow edges in bilayer graphene nanoribbons: tuning the transition from band to Mott insulator. Physical review B, 81(23), Article 235422 . https://doi.org/10.1103/PhysRevB.81.235422

Vancouver

Cortijo Fernandez A, Oroszlany L, Schomerus H. Fast and slow edges in bilayer graphene nanoribbons: tuning the transition from band to Mott insulator. Physical review B. 2010 Jun 16;81(23):235422 . doi: 10.1103/PhysRevB.81.235422

Author

Cortijo Fernandez, Alberto ; Oroszlany, Laszlo ; Schomerus, Henning. / Fast and slow edges in bilayer graphene nanoribbons : tuning the transition from band to Mott insulator. In: Physical review B. 2010 ; Vol. 81, No. 23.

Bibtex

@article{78b02d80b8714df2b4811d7534261c28,
title = "Fast and slow edges in bilayer graphene nanoribbons: tuning the transition from band to Mott insulator",
abstract = "We show that gated bilayer graphene zigzag ribbons possess a fast and a slow edge, characterized by edge-state velocities that differ due to non-negligible next-nearest-neighbor hopping elements. By applying bosonization and renormalization group methods, we find that the slow edge can acquire a sizable interaction-induced gap, which is tunable via an external gate voltage Vg. In contrast to the gate-induced gap in the bulk, the interaction-induced gap depends nonmonotonously on the on-site potential V.",
author = "{Cortijo Fernandez}, Alberto and Laszlo Oroszlany and Henning Schomerus",
note = "{\textcopyright} 2010 The American Physical Society",
year = "2010",
month = jun,
day = "16",
doi = "10.1103/PhysRevB.81.235422",
language = "English",
volume = "81",
journal = "Physical review B",
issn = "1550-235X",
publisher = "AMER PHYSICAL SOC",
number = "23",

}

RIS

TY - JOUR

T1 - Fast and slow edges in bilayer graphene nanoribbons

T2 - tuning the transition from band to Mott insulator

AU - Cortijo Fernandez, Alberto

AU - Oroszlany, Laszlo

AU - Schomerus, Henning

N1 - © 2010 The American Physical Society

PY - 2010/6/16

Y1 - 2010/6/16

N2 - We show that gated bilayer graphene zigzag ribbons possess a fast and a slow edge, characterized by edge-state velocities that differ due to non-negligible next-nearest-neighbor hopping elements. By applying bosonization and renormalization group methods, we find that the slow edge can acquire a sizable interaction-induced gap, which is tunable via an external gate voltage Vg. In contrast to the gate-induced gap in the bulk, the interaction-induced gap depends nonmonotonously on the on-site potential V.

AB - We show that gated bilayer graphene zigzag ribbons possess a fast and a slow edge, characterized by edge-state velocities that differ due to non-negligible next-nearest-neighbor hopping elements. By applying bosonization and renormalization group methods, we find that the slow edge can acquire a sizable interaction-induced gap, which is tunable via an external gate voltage Vg. In contrast to the gate-induced gap in the bulk, the interaction-induced gap depends nonmonotonously on the on-site potential V.

U2 - 10.1103/PhysRevB.81.235422

DO - 10.1103/PhysRevB.81.235422

M3 - Journal article

VL - 81

JO - Physical review B

JF - Physical review B

SN - 1550-235X

IS - 23

M1 - 235422

ER -