TY - GEN

T1 - Feasibility demonstration of new e-NVM cells suitable for integration at 28nm

AU - Tekin, Serdar B.

PY - 2017/7/3

Y1 - 2017/7/3

N2 - Memory cell selection for 28 nm and beyond and its integration into new eNVM technology have been investigated through atomic layer deposition (ALD) HfO 2 resistive memory devices. Both amorphous and crystalline HfO 2 layers exhibit promising switching characteristics. It was shown that more than 3 times less power is required to activate the memory device fabricated using the amorphous layer. The forming voltages for both of the memory cell are greater than 10 Volt relative to layer thickness of 50 nm. As an alternative potential resistive memory element, SiOx layer formed on n and p type Si wafers exhibited interesting forming features.

AB - Memory cell selection for 28 nm and beyond and its integration into new eNVM technology have been investigated through atomic layer deposition (ALD) HfO 2 resistive memory devices. Both amorphous and crystalline HfO 2 layers exhibit promising switching characteristics. It was shown that more than 3 times less power is required to activate the memory device fabricated using the amorphous layer. The forming voltages for both of the memory cell are greater than 10 Volt relative to layer thickness of 50 nm. As an alternative potential resistive memory element, SiOx layer formed on n and p type Si wafers exhibited interesting forming features.

U2 - 10.1109/ulis.2017.7962599

DO - 10.1109/ulis.2017.7962599

M3 - Conference contribution/Paper

BT - 2017 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)

PB - IEEE

ER -