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Ferroelectric semiconductor junctions based on graphene/In2Se3/graphene van der Waals heterostructures

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  • Shihong Xie
  • Anubhab Dey
  • Wenjing Yan
  • Zakhar Kudrynskyi
  • Nilanthy Balakrishnan
  • Oleg Makarovskiy
  • Zakhar Kovalyuk
  • Eli Castanon
  • Oleg Kolosov
  • Kaiyou Wang
  • Amalia Patane
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Article number045020
<mark>Journal publication date</mark>20/08/2021
<mark>Journal</mark>2D Materials
Issue number4
Volume8
Number of pages10
Publication StatusPublished
<mark>Original language</mark>English

Abstract

The miniaturization of ferroelectric devices offers prospects for non-volatile memories, low-power electrical switches and emerging technologies beyond existing Si-based integrated circuits. An emerging class of ferroelectrics is based on van der Waals (vdW) two-dimensional materials with potential for nano-ferroelectrics. Here, we report on ferroelectric semiconductor junctions (FSJs) in which the ferroelectric vdW semiconductor α-In2Se3 is embedded between two single-layer graphene electrodes. In these two-terminal devices, the ferroelectric polarization of the nanometre-thick In2Se3 layer modulates the transmission of electrons across the graphene/In2Se3 interface, leading to memristive effects that are controlled by applied voltages and/or by light. The underlying mechanisms of conduction are examined over a range of temperatures and under light excitation revealing thermionic injection, tunnelling and trap-assisted transport. These findings are relevant to future developments of FSJs whose geometry is well suited to miniaturization and low-power electronics, offering opportunities to expand functionalities of ferroelectrics by design of the vdW heterostructure.