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Ferroelectric semiconductor junctions based on graphene/In2Se3/graphene van der Waals heterostructures

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Ferroelectric semiconductor junctions based on graphene/In2Se3/graphene van der Waals heterostructures. / Xie, Shihong; Dey, Anubhab; Yan, Wenjing ; Kudrynskyi, Zakhar; Balakrishnan, Nilanthy; Makarovskiy, Oleg; Kovalyuk, Zakhar ; Castanon, Eli; Kolosov, Oleg; Wang, Kaiyou; Patane, Amalia.

In: 2D Materials, Vol. 8, No. 4, 045020, 01.10.2021.

Research output: Contribution to journalJournal articlepeer-review

Harvard

Xie, S, Dey, A, Yan, W, Kudrynskyi, Z, Balakrishnan, N, Makarovskiy, O, Kovalyuk, Z, Castanon, E, Kolosov, O, Wang, K & Patane, A 2021, 'Ferroelectric semiconductor junctions based on graphene/In2Se3/graphene van der Waals heterostructures', 2D Materials, vol. 8, no. 4, 045020. https://doi.org/10.1088/2053-1583/ac1ada/meta

APA

Xie, S., Dey, A., Yan, W., Kudrynskyi, Z., Balakrishnan, N., Makarovskiy, O., Kovalyuk, Z., Castanon, E., Kolosov, O., Wang, K., & Patane, A. (2021). Ferroelectric semiconductor junctions based on graphene/In2Se3/graphene van der Waals heterostructures. 2D Materials, 8(4), [045020]. https://doi.org/10.1088/2053-1583/ac1ada/meta

Vancouver

Xie S, Dey A, Yan W, Kudrynskyi Z, Balakrishnan N, Makarovskiy O et al. Ferroelectric semiconductor junctions based on graphene/In2Se3/graphene van der Waals heterostructures. 2D Materials. 2021 Oct 1;8(4). 045020. https://doi.org/10.1088/2053-1583/ac1ada/meta

Author

Xie, Shihong ; Dey, Anubhab ; Yan, Wenjing ; Kudrynskyi, Zakhar ; Balakrishnan, Nilanthy ; Makarovskiy, Oleg ; Kovalyuk, Zakhar ; Castanon, Eli ; Kolosov, Oleg ; Wang, Kaiyou ; Patane, Amalia. / Ferroelectric semiconductor junctions based on graphene/In2Se3/graphene van der Waals heterostructures. In: 2D Materials. 2021 ; Vol. 8, No. 4.

Bibtex

@article{57c01f0ace344ec7900bea7cd90d8404,
title = "Ferroelectric semiconductor junctions based on graphene/In2Se3/graphene van der Waals heterostructures",
abstract = "The miniaturization of ferroelectric devices offers prospects for non-volatile memories, low-power electrical switches and emerging technologies beyond existing Si-based integrated circuits. An emerging class of ferroelectrics is based on van der Waals (vdW) two-dimensional materials with potential for nano-ferroelectrics. Here, we report on ferroelectric semiconductor junctions (FSJs) in which the ferroelectric vdW semiconductor α-In2Se3 is embedded between two single-layer graphene electrodes. In these two-terminal devices, the ferroelectric polarization of the nanometre-thick In2Se3 layer modulates the transmission of electrons across the graphene/In2Se3 interface, leading to memristive effects that are controlled by applied voltages and/or by light. The underlying mechanisms of conduction are examined over a range of temperatures and under light excitation revealing thermionic injection, tunnelling and trap-assisted transport. These findings are relevant to future developments of FSJs whose geometry is well suited to miniaturization and low-power electronics, offering opportunities to expand functionalities of ferroelectrics by design of the vdW heterostructure.",
author = "Shihong Xie and Anubhab Dey and Wenjing Yan and Zakhar Kudrynskyi and Nilanthy Balakrishnan and Oleg Makarovskiy and Zakhar Kovalyuk and Eli Castanon and Oleg Kolosov and Kaiyou Wang and Amalia Patane",
year = "2021",
month = oct,
day = "1",
doi = "10.1088/2053-1583/ac1ada/meta",
language = "English",
volume = "8",
journal = "2D Materials",
issn = "2053-1583",
publisher = "IOP Publishing Ltd.",
number = "4",

}

RIS

TY - JOUR

T1 - Ferroelectric semiconductor junctions based on graphene/In2Se3/graphene van der Waals heterostructures

AU - Xie, Shihong

AU - Dey, Anubhab

AU - Yan, Wenjing

AU - Kudrynskyi, Zakhar

AU - Balakrishnan, Nilanthy

AU - Makarovskiy, Oleg

AU - Kovalyuk, Zakhar

AU - Castanon, Eli

AU - Kolosov, Oleg

AU - Wang, Kaiyou

AU - Patane, Amalia

PY - 2021/10/1

Y1 - 2021/10/1

N2 - The miniaturization of ferroelectric devices offers prospects for non-volatile memories, low-power electrical switches and emerging technologies beyond existing Si-based integrated circuits. An emerging class of ferroelectrics is based on van der Waals (vdW) two-dimensional materials with potential for nano-ferroelectrics. Here, we report on ferroelectric semiconductor junctions (FSJs) in which the ferroelectric vdW semiconductor α-In2Se3 is embedded between two single-layer graphene electrodes. In these two-terminal devices, the ferroelectric polarization of the nanometre-thick In2Se3 layer modulates the transmission of electrons across the graphene/In2Se3 interface, leading to memristive effects that are controlled by applied voltages and/or by light. The underlying mechanisms of conduction are examined over a range of temperatures and under light excitation revealing thermionic injection, tunnelling and trap-assisted transport. These findings are relevant to future developments of FSJs whose geometry is well suited to miniaturization and low-power electronics, offering opportunities to expand functionalities of ferroelectrics by design of the vdW heterostructure.

AB - The miniaturization of ferroelectric devices offers prospects for non-volatile memories, low-power electrical switches and emerging technologies beyond existing Si-based integrated circuits. An emerging class of ferroelectrics is based on van der Waals (vdW) two-dimensional materials with potential for nano-ferroelectrics. Here, we report on ferroelectric semiconductor junctions (FSJs) in which the ferroelectric vdW semiconductor α-In2Se3 is embedded between two single-layer graphene electrodes. In these two-terminal devices, the ferroelectric polarization of the nanometre-thick In2Se3 layer modulates the transmission of electrons across the graphene/In2Se3 interface, leading to memristive effects that are controlled by applied voltages and/or by light. The underlying mechanisms of conduction are examined over a range of temperatures and under light excitation revealing thermionic injection, tunnelling and trap-assisted transport. These findings are relevant to future developments of FSJs whose geometry is well suited to miniaturization and low-power electronics, offering opportunities to expand functionalities of ferroelectrics by design of the vdW heterostructure.

U2 - 10.1088/2053-1583/ac1ada/meta

DO - 10.1088/2053-1583/ac1ada/meta

M3 - Journal article

VL - 8

JO - 2D Materials

JF - 2D Materials

SN - 2053-1583

IS - 4

M1 - 045020

ER -