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GaAs and AlGaAs APDs with GaSb absorption regions in a separate absorption and multiplication structure using a hetero-lattice interface

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GaAs and AlGaAs APDs with GaSb absorption regions in a separate absorption and multiplication structure using a hetero-lattice interface. / Marshall, Andrew; Craig, Adam; Reyner, Charles J. et al.
In: Infrared Physics and Technology, Vol. 70, 05.2015, p. 168-170.

Research output: Contribution to Journal/Magazine › Journal article › peer-review

Harvard

Marshall, A, Craig, A, Reyner, CJ & Huffaker, DL 2015, 'GaAs and AlGaAs APDs with GaSb absorption regions in a separate absorption and multiplication structure using a hetero-lattice interface', Infrared Physics and Technology, vol. 70, pp. 168-170. https://doi.org/10.1016/j.infrared.2014.08.014

APA

Marshall, A., Craig, A., Reyner, C. J., & Huffaker, D. L. (2015). GaAs and AlGaAs APDs with GaSb absorption regions in a separate absorption and multiplication structure using a hetero-lattice interface. Infrared Physics and Technology, 70, 168-170. https://doi.org/10.1016/j.infrared.2014.08.014

Vancouver

Marshall A, Craig A, Reyner CJ, Huffaker DL. GaAs and AlGaAs APDs with GaSb absorption regions in a separate absorption and multiplication structure using a hetero-lattice interface. Infrared Physics and Technology. 2015 May;70:168-170. Epub 2014 Aug 23. doi: 10.1016/j.infrared.2014.08.014

Author

Marshall, Andrew ; Craig, Adam ; Reyner, Charles J. et al. / GaAs and AlGaAs APDs with GaSb absorption regions in a separate absorption and multiplication structure using a hetero-lattice interface. In: Infrared Physics and Technology. 2015 ; Vol. 70. pp. 168-170.

Bibtex

@article{1de86266e1b34e049f7b6058b105b724,
title = "GaAs and AlGaAs APDs with GaSb absorption regions in a separate absorption and multiplication structure using a hetero-lattice interface",
abstract = "Interfacial misfit (IMF) arrays were used to create two APD structures, allowing GaSb absorption layers to be combined with wide-gap multiplication regions, grown using GaAs and Al0.8Ga0.2As, respectively. The GaAs APD represents a proof-of-principle, which is developed in the Al0.8Ga0.2As APD to achieve reduced dark currents, of 5.07 μA cm−2 at 90% of the breakdown voltage, and values for effective k = β/α below 0.2. A random-path-length (RPL) simulation was used to model the excess noise in both structures, taking into account the effects of dead space. It is envisaged that the GaSb absorption regions could be replaced with other materials from the 6.1 {\AA} family, allowing for long-wavelength APDs with reduced dark currents and excess noise.",
keywords = "Avalanche photodiode, Interface misfit epitaxy, Excess noise, Random path length model",
author = "Andrew Marshall and Adam Craig and Reyner, {Charles J.} and Huffaker, {Diana L.}",
year = "2015",
month = may,
doi = "10.1016/j.infrared.2014.08.014",
language = "English",
volume = "70",
pages = "168--170",
journal = "Infrared Physics and Technology",
issn = "1350-4495",
publisher = "Elsevier",

}

RIS

TY - JOUR

T1 - GaAs and AlGaAs APDs with GaSb absorption regions in a separate absorption and multiplication structure using a hetero-lattice interface

AU - Marshall, Andrew

AU - Craig, Adam

AU - Reyner, Charles J.

AU - Huffaker, Diana L.

PY - 2015/5

Y1 - 2015/5

N2 - Interfacial misfit (IMF) arrays were used to create two APD structures, allowing GaSb absorption layers to be combined with wide-gap multiplication regions, grown using GaAs and Al0.8Ga0.2As, respectively. The GaAs APD represents a proof-of-principle, which is developed in the Al0.8Ga0.2As APD to achieve reduced dark currents, of 5.07 μA cm−2 at 90% of the breakdown voltage, and values for effective k = β/α below 0.2. A random-path-length (RPL) simulation was used to model the excess noise in both structures, taking into account the effects of dead space. It is envisaged that the GaSb absorption regions could be replaced with other materials from the 6.1 Å family, allowing for long-wavelength APDs with reduced dark currents and excess noise.

AB - Interfacial misfit (IMF) arrays were used to create two APD structures, allowing GaSb absorption layers to be combined with wide-gap multiplication regions, grown using GaAs and Al0.8Ga0.2As, respectively. The GaAs APD represents a proof-of-principle, which is developed in the Al0.8Ga0.2As APD to achieve reduced dark currents, of 5.07 μA cm−2 at 90% of the breakdown voltage, and values for effective k = β/α below 0.2. A random-path-length (RPL) simulation was used to model the excess noise in both structures, taking into account the effects of dead space. It is envisaged that the GaSb absorption regions could be replaced with other materials from the 6.1 Å family, allowing for long-wavelength APDs with reduced dark currents and excess noise.

KW - Avalanche photodiode

KW - Interface misfit epitaxy

KW - Excess noise

KW - Random path length model

U2 - 10.1016/j.infrared.2014.08.014

DO - 10.1016/j.infrared.2014.08.014

M3 - Journal article

VL - 70

SP - 168

EP - 170

JO - Infrared Physics and Technology

JF - Infrared Physics and Technology

SN - 1350-4495

ER -