Research output: Contribution to Journal/Magazine › Journal article › peer-review
Research output: Contribution to Journal/Magazine › Journal article › peer-review
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TY - JOUR
T1 - Growth optimization of self-organized InSb/InAs quantum dots.
AU - Zhuang, Q.
AU - Carrington, P. J.
AU - Krier, A.
N1 - Article number: 232003
PY - 2008/11/13
Y1 - 2008/11/13
N2 - The authors report the growth optimization of InSb/InAs quantum dots (QDs) by molecular beam epitaxy (MBE). QDs morphology and optical properties were investigated by atomic force microscope and photoluminescence (PL). We observed that the migration enhanced epitaxy technique without the annealing stage is a superior method for producing high quality coherent QDs with a high density of similar to 1.2 x 10(10) dots cm(-2). PL emission from buried InSb/InAs QDs was observed at low temperatures at a wavelength near 3.3 mu m. In addition, the emission efficiency was dramatically improved for the samples where the InAs cap layer was grown at a lower temperature, indicating that low growth temperatures are required to maintain good properties of QDs which is due to reduced As/Sb exchange.
AB - The authors report the growth optimization of InSb/InAs quantum dots (QDs) by molecular beam epitaxy (MBE). QDs morphology and optical properties were investigated by atomic force microscope and photoluminescence (PL). We observed that the migration enhanced epitaxy technique without the annealing stage is a superior method for producing high quality coherent QDs with a high density of similar to 1.2 x 10(10) dots cm(-2). PL emission from buried InSb/InAs QDs was observed at low temperatures at a wavelength near 3.3 mu m. In addition, the emission efficiency was dramatically improved for the samples where the InAs cap layer was grown at a lower temperature, indicating that low growth temperatures are required to maintain good properties of QDs which is due to reduced As/Sb exchange.
U2 - 10.1088/0022-3727/41/23/232003
DO - 10.1088/0022-3727/41/23/232003
M3 - Journal article
VL - 41
JO - Journal of Physics D: Applied Physics
JF - Journal of Physics D: Applied Physics
SN - 0022-3727
IS - 23
M1 - 232003
ER -