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Growth optimization of self-organized InSb/InAs quantum dots.

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Growth optimization of self-organized InSb/InAs quantum dots. / Zhuang, Q.; Carrington, P. J.; Krier, A.

In: Journal of Physics D: Applied Physics, Vol. 41, No. 23, 232003, 13.11.2008.

Research output: Contribution to Journal/MagazineJournal articlepeer-review

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Zhuang Q, Carrington PJ, Krier A. Growth optimization of self-organized InSb/InAs quantum dots. Journal of Physics D: Applied Physics. 2008 Nov 13;41(23):232003. doi: 10.1088/0022-3727/41/23/232003

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Zhuang, Q. ; Carrington, P. J. ; Krier, A. / Growth optimization of self-organized InSb/InAs quantum dots. In: Journal of Physics D: Applied Physics. 2008 ; Vol. 41, No. 23.

Bibtex

@article{c303d767600443bb99a4de1077a3c004,
title = "Growth optimization of self-organized InSb/InAs quantum dots.",
abstract = "The authors report the growth optimization of InSb/InAs quantum dots (QDs) by molecular beam epitaxy (MBE). QDs morphology and optical properties were investigated by atomic force microscope and photoluminescence (PL). We observed that the migration enhanced epitaxy technique without the annealing stage is a superior method for producing high quality coherent QDs with a high density of similar to 1.2 x 10(10) dots cm(-2). PL emission from buried InSb/InAs QDs was observed at low temperatures at a wavelength near 3.3 mu m. In addition, the emission efficiency was dramatically improved for the samples where the InAs cap layer was grown at a lower temperature, indicating that low growth temperatures are required to maintain good properties of QDs which is due to reduced As/Sb exchange.",
author = "Q. Zhuang and Carrington, {P. J.} and A. Krier",
note = "Article number: 232003",
year = "2008",
month = nov,
day = "13",
doi = "10.1088/0022-3727/41/23/232003",
language = "English",
volume = "41",
journal = "Journal of Physics D: Applied Physics",
issn = "0022-3727",
publisher = "IOP Publishing Ltd",
number = "23",

}

RIS

TY - JOUR

T1 - Growth optimization of self-organized InSb/InAs quantum dots.

AU - Zhuang, Q.

AU - Carrington, P. J.

AU - Krier, A.

N1 - Article number: 232003

PY - 2008/11/13

Y1 - 2008/11/13

N2 - The authors report the growth optimization of InSb/InAs quantum dots (QDs) by molecular beam epitaxy (MBE). QDs morphology and optical properties were investigated by atomic force microscope and photoluminescence (PL). We observed that the migration enhanced epitaxy technique without the annealing stage is a superior method for producing high quality coherent QDs with a high density of similar to 1.2 x 10(10) dots cm(-2). PL emission from buried InSb/InAs QDs was observed at low temperatures at a wavelength near 3.3 mu m. In addition, the emission efficiency was dramatically improved for the samples where the InAs cap layer was grown at a lower temperature, indicating that low growth temperatures are required to maintain good properties of QDs which is due to reduced As/Sb exchange.

AB - The authors report the growth optimization of InSb/InAs quantum dots (QDs) by molecular beam epitaxy (MBE). QDs morphology and optical properties were investigated by atomic force microscope and photoluminescence (PL). We observed that the migration enhanced epitaxy technique without the annealing stage is a superior method for producing high quality coherent QDs with a high density of similar to 1.2 x 10(10) dots cm(-2). PL emission from buried InSb/InAs QDs was observed at low temperatures at a wavelength near 3.3 mu m. In addition, the emission efficiency was dramatically improved for the samples where the InAs cap layer was grown at a lower temperature, indicating that low growth temperatures are required to maintain good properties of QDs which is due to reduced As/Sb exchange.

U2 - 10.1088/0022-3727/41/23/232003

DO - 10.1088/0022-3727/41/23/232003

M3 - Journal article

VL - 41

JO - Journal of Physics D: Applied Physics

JF - Journal of Physics D: Applied Physics

SN - 0022-3727

IS - 23

M1 - 232003

ER -