In semiconductor neutron detectors with a layered structure, the fundamental
structure consists of a converter layer and a semiconductor layer. It has been shown in research focused on these detectors that the thicknesses of both the converter and semiconductor layers crucially impact the efficiency of neutron detection.

However, there is a notable scarcity of studies that determine the optimal
thickness of the converter layer and the corresponding optimal thickness of the
semiconductor layer, especially using direct theoretical formulas for the efficiency of the converter layer. This lack of research is particularly evident for wide-bandgap semiconductor materials such as diamond, silicon carbide (SiC), gallium oxide (Ga2O3), gallium nitride (GaN), and the perovskite material caesium lead bromide (CsPbBr3).

Herein, on the basis of theoretical studies about the efficiency of layered semiconductor detectors, a systematic method has been proposed for calculating the optimal thicknesses for two types of converter layers. This method has been implemented in computational software. By inputting the macroscopic cross-section